WSD100N06GDN56 N-saluran 60V 100A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD100N06GDN56 MOSFET yaiku 60V, saiki yaiku 100A, resistensi yaiku 3mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
Penyetor tenaga medis MOSFET, PDs MOSFET, drone MOSFET, rokok elektronik MOSFET, peralatan utama MOSFET, lan alat listrik MOSFET.
WINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semikonduktor MOSFET PDC692X.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit | ||
| VDS | Drain-Sumber Tegangan | 60 | V | ||
| VGS | Tegangan Gate-Sumber | ±20 | V | ||
| ID1,6 | Arus Saluran Terus | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC=25°C | 240 | A | |
| PD | Boros Daya Maksimum | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Arus Longsor, Pulsa tunggal | 45 | A | ||
| EAS3 | Energi Longsor Pulsa Tunggal | 101 | mJ | ||
| TJ | Suhu Junction maksimum | 150 | ℃ | ||
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ | ||
| RθJA1 | Thermal Resistance Junction kanggo lingkungan | Steady State | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Junction kanggo Case | Steady State | 1.5 | ℃/W | |
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit | |
| Statis | |||||||
| V(BR)DSS | Tegangan Pecah Sumber Saluran | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Arus Kebocoran Gerbang | VGS = ±20V, VDS = 0V | ± 100 | nA | |||
| On Karakteristik | |||||||
| VGS(TH) | Tegangan Ambang Gerbang | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS (ing)2 | Drain-Sumber On-Negara Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ngalih | |||||||
| Qg | Total Biaya Gate | VDS = 30 V VGS = 10 V ID=20A | 58 | nC | |||
| Qgs | Gate-Sour Charge | 16 | nC | ||||
| Qgd | Gate-Drain Charge | 4.0 | nC | ||||
| td (ing) | Aktifake Wektu Tundha | VGEN=10V VDD = 30 V ID=20A RG=Ω | 18 | ns | |||
| tr | Nguripake Wektu Rise | 8 | ns | ||||
| td (mati) | Pateni Wektu Tundha | 50 | ns | ||||
| tf | Pateni Wektu Tiba | 11 | ns | ||||
| Rg | resistensi Gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dinamis | |||||||
| Ciss | Ing Kapasitansi | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Kapasitansi Out | 1522 | pF | ||||
| Crss | Kapasitansi Transfer Mbalik | 22 | pF | ||||
| Karakteristik Dioda Sumber Saluran lan Rating Maksimum | |||||||
| IS1,5 | Sumber Terusan Saiki | VG=VD=0V , Daya Arus | 55 | A | |||
| ISM | Pulsed Source Current3 | 240 | A | ||||
| VSD2 | Tegangan Maju Dioda | ISD = 1A , VGS = 0V | 0.8 | 1.3 | V | ||
| trr | Wektu Recovery mbalikke | ISD= 20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery daya | 33 | nC | ||||
