WSD100N15DN56G N-saluran 150V 100A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan saka WSD100N15DN56G MOSFET yaiku 150V, saiki yaiku 100A, resistensi yaiku 6mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
Penyetor tenaga medis MOSFET, PDs MOSFET, drone MOSFET, rokok elektronik MOSFET, peralatan utama MOSFET, lan alat listrik MOSFET.
paramèter MOSFET
Simbol | Paramèter | Rating | Unit |
VDS | Drain-Sumber Tegangan | 150 | V |
VGS | Tegangan Gate-Sumber | ±20 | V |
ID | Arus Saluran Kontinu, VGS@ 10V(TC=25 ℃) | 100 | A |
IDM | Pulsed Drain Current | 360 | A |
EAS | Energi Longsor Pulsa Tunggal | 400 | mJ |
PD | Total Dissipasi Daya...C=25 ℃) | 160 | W |
RθJA | Rintangan termal, persimpangan-ambient | 62 | ℃ / W |
RθJC | Resistance termal, junction-case | 0.78 | ℃ / W |
TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 175 | ℃ |
TJ | Kisaran Suhu Operating Junction | -55 kanggo 175 | ℃ |
Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 150 | --- | --- | V |
RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS= 10 V, ingD=20A | --- | 9 | 12 | mΩ |
VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 2.0 | 3.0 | 4.0 | V |
IDSS | Arus Kebocoran Sumber Saluran | VDS= 100 V, VGS= 0 V, TJ=25 ℃ | --- | --- | 1 | uA |
IGSS | Arus Kebocoran Sumber Gerbang | VGS= ± 20 V, VDS= 0V | --- | --- | ± 100 | nA |
Qg | Total Biaya Gate | VDS= 50 V, VGS= 10 V, ingD=20A | --- | 66 | --- | nC |
Qgs | Gate-Sumber Daya | --- | 26 | --- | ||
Qgd | Gate-Drain Charge | --- | 18 | --- | ||
Td (ing) | Wektu Tundha Aktifake | VDD= 50 V,VGS= 10 V RG= 2Ω, ID=20A | --- | 37 | --- | ns |
Tr | Wektu Rise | --- | 98 | --- | ||
Td (mati) | Wektu Tundha Pateni | --- | 55 | --- | ||
Tf | Tiba Wektu | --- | 20 | --- | ||
Ciss | Kapasitansi Input | VDS= 30 V, VGS=0V, f=1MHz | --- | 5450 | --- | pF |
Coss | Kapasitansi Output | --- | 1730 | --- | ||
Crss | Kapasitansi Transfer Mbalik | --- | 195 | --- |