WSD20100DN56 N-saluran 20V 90A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan saka WSD20100DN56 MOSFET yaiku 20V, saiki yaiku 90A, resistensi yaiku 1.6mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
Rokok elektronik MOSFET, drone MOSFET, piranti listrik MOSFET, fascia bedhil MOSFET, PD MOSFET, peralatan rumah tangga cilik MOSFET.
WINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6572.
POTENS Semikonduktor MOSFET PDC394X.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit |
| VDS | Drain-Sumber Tegangan | 20 | V |
| VGS | Tegangan Gate-Sumber | ± 12 | V |
| ID@TC=25 ℃ | Arus Saluran Terus1 | 90 | A |
| ID@TC=100 ℃ | Arus Saluran Terus1 | 48 | A |
| IDM | Pulsed Drain Current2 | 270 | A |
| EAS | Energi Longsor Pulsa Tunggal3 | 80 | mJ |
| IAS | Arus longsor | 40 | A |
| PD@TC=25 ℃ | Total Power Dissipation4 | 83 | W |
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
| TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient1(t≦10S) | 20 | ℃/W |
| RθJA | Thermal Resistance Junction-ambient1(Steady State) | 55 | ℃/W |
| RθJC | Thermal Resistance Junction-kasus1 | 1.5 | ℃/W |
| Simbol | Paramèter | kahanan | Min | Tipe | Maks | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS=0V, ID=250uA | 20 | 23 | --- | V |
| VGS(th) | Tegangan Ambang Gerbang | VGS = VDS , ID = 250uA | 0.5 | 0.68 | 1.0 | V |
| RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS=10V, ID=20A | --- | 1.6 | 2.0 | mΩ |
| RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS=4.5V, ID=20A | 1.9 | 2.5 | mΩ | |
| RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS=2.5V, ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Arus Kebocoran Sumber Saluran | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=125℃ | --- | --- | 5 | |||
| IGSS | Arus Kebocoran Sumber Gerbang | VGS=±10V, VDS=0V | --- | --- | ± 10 | uA |
| Rg | Resistance Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=15V, VGS=10V, ID=20A | --- | 77 | --- | nC |
| Qgs | Gate-Sumber Daya | --- | 8.7 | --- | ||
| Qgd | Gate-Drain Charge | --- | 14 | --- | ||
| Td (ing) | Wektu Tundha Aktifake | VDD=15V, VGS=10V, RG=3, ID=20A | --- | 10.2 | --- | ns |
| Tr | Wektu Rise | --- | 11.7 | --- | ||
| Td (mati) | Wektu Tundha Pateni | --- | 56.4 | --- | ||
| Tf | Tiba Wektu | --- | 16.2 | --- | ||
| Ciss | Kapasitansi Input | VDS=10V, VGS=0V, f=1MHz | --- | 4307 | --- | pF |
| Coss | Kapasitansi Output | --- | 501 | --- | ||
| Crss | Kapasitansi Transfer Mbalik | --- | 321 | --- | ||
| IS | Sumber Terusan Saiki1,5 | VG=VD= 0V, Daya Arus | --- | --- | 50 | A |
| VSD | Tegangan Maju Dioda2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Wektu Recovery mbalikke | IF=20A, di/dt=100A/µs, TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Reverse Recovery daya | --- | 72 | --- | nC |
