WSD2090DN56 N-saluran 20V 80A DFN5*6-8 WINSOK MOSFET

katrangan singkat:

Nomer Model:WSD2090DN56

BVDSS:20V

RDSON:2,8mΩ

ID:80A

Saluran:N-saluran

Paket:DFN5*6-8

Produk Summery:Tegangan saka WSD2090DN56 MOSFET punika 20V, saiki punika 80A, resistance punika 2.8mΩ, saluran N-saluran, lan paket punika DFN5 * 6-8.

Aplikasi:Rokok elektronik, drone, piranti listrik, bedhil fascia, PD, peralatan rumah tangga cilik, lsp.

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Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSD2090DN56 minangka trench N-Ch MOSFET kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo umume aplikasi konverter buck sinkron. WSD2090DN56 nyukupi syarat RoHS lan Produk Ijo 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

Fitur

Teknologi Trench kapadhetan sel dhuwur sing canggih, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo Kasedhiya

Aplikasi

Switch, Power System, Load Switch, rokok elektronik, drone, alat listrik, bedhil fascia, PD, peralatan rumah tangga cilik, lsp.

nomer materi sing cocog

AOS AON6572

Paramèter penting

Rating Maksimum Absolute (TC=25 ℃ kajaba kacathet)

Simbol	Paramèter	Maks.	Unit
VDSS	Drain-Sumber Tegangan	20	V
VGSS	Tegangan Gate-Sumber	± 12	V
ID@TC=25 ℃	Arus Saluran Terus, VGS @ 10V1	80	A
ID@TC=100 ℃	Arus Saluran Terus, VGS @ 10V1	59	A
IDM	Pulsed Drain Cathetan saiki1	360	A
EAS	Cathetan Energi Longsor Tunggal Pulsed2	110	mJ
PD	Dissipasi Daya	81	W
RθJA	Resistance Thermal, Junction kanggo Case	65	℃ / W
RθJC	Thermal Resistance Junction-Kasus 1	4	℃ / W
TJ, TTG	Operasi lan Panyimpenan Range Suhu	-55 kanggo +175	℃

Karakteristik Listrik (TJ=25 ℃, kajaba kacathet)

Simbol	Paramèter	kahanan	Min	Tipe	Maks	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	Koefisien Suhu BVDSS	Referensi kanggo 25 ℃, ID = 1mA	---	0.018	---	V/℃
VGS(th)	Tegangan Ambang Gerbang	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS (ON)	Statis Saluran-Sumber On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS (ON)	Statis Saluran-Sumber On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Zero Gate Voltage Drain Current	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Arus Bocor Gate-Body	VGS=±10V, VDS=0V	---	---	± 100	nA
Ciss	Kapasitansi Input	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Kapasitansi Output		---	460	---
Crss	Kapasitansi Transfer Mbalik		---	446	---
Qg	Total Biaya Gate	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Gate-Sumber Daya		---	1.73	---
Qgd	Gate-Drain Charge		---	3.1	---
tD (ing)	Aktifake Wektu Tundha	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Nguripake Wektu Rise		---	37	---
tD (mati)	Pateni Wektu Tundha		---	63	---
tf	Pateni-mati tiba Wektu		---	52	---
VSD	Tegangan Maju Dioda	IS=7.6A,VGS=0V	---	---	1.2	V