WSD20L120DN56 P-saluran -20V -120A DFN5*6-8 WINSOK MOSFET

WSD20L120DN56 P-channel -20V -120A DFN5*6-8 WINSOK MOSFET Gambar Unggulan

katrangan singkat:

Nomer Model:WSD20L120DN56

BVDSS:-20 V

RDSON:2.1mΩ

ID:-120A

Saluran:P-saluran

Paket:DFN5*6-8

Produk Summery:MOSFET WSD20L120DN56 beroperasi ing -20 volt lan narik arus -120 amp. Wis resistance 2,1 milliohms, P-saluran, lan rawuh ing paket DFN5 * 6-8.

Aplikasi:Rokok elektronik, pangisi daya nirkabel, motor, drone, peralatan medis, pangisi daya mobil, pengontrol, piranti digital, piranti cilik, lan elektronik konsumen.

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Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSD20L120DN56 minangka MOSFET P-Ch kanthi kinerja paling dhuwur kanthi struktur sel kepadatan dhuwur, menehi RDSON lan biaya gerbang sing paling apik kanggo panggunaan konverter buck sing paling sinkron. WSD20L120DN56 nyukupi syarat 100% EAS kanggo RoHS lan produk sing ramah lingkungan, kanthi persetujuan linuwih fungsi lengkap.

Fitur

1, teknologi Trench kapadhetan sel dhuwur
2, Super Low Gate Charge
3, Banget CdV/dt efek nolak
4, 100% EAS Dijamin 5, Piranti Ijo Kasedhiya

Aplikasi

Konverter Buck Sinkron Titik Beban Frekuensi Tinggi kanggo MB/NB/UMPC/VGA, Sistem Daya DC-DC Jaringan, Saklar Beban, Rokok Elektronik, Pengisi Daya Nirkabel, Motor, Drone, Medis, Pengisi Daya Mobil, Pengontrol, Produk Digital, Piranti Omah Cilik, Elektronik Konsumen.

nomer materi sing cocog

AOS AON6411,NIKO PK5A7BA

Paramèter penting

Simbol	Paramèter	Rating		Unit
Simbol	Paramèter	10s	Steady State	Unit
VDS	Drain-Sumber Tegangan	-20		V
VGS	Tegangan Gate-Sumber	± 10		V
ID@TC=25 ℃	Arus Saluran Terus, VGS @ -10V1	-120		A
ID@TC=100 ℃	Arus Saluran Terus, VGS @ -10V1	-69.5		A
ID@TA=25 ℃	Arus Saluran Terus, VGS @ -10V1	-25	-22	A
ID@TA=70 ℃	Arus Saluran Terus, VGS @ -10V1	-24	-18	A
IDM	Pulsed Drain Current2	-340		A
EAS	Energi Longsor Pulsa Tunggal3	300		mJ
IAS	Arus longsor	-36		A
PD@TC=25 ℃	Total Dissipasi Daya4	130		W
PD@TA=25 ℃	Total Dissipasi Daya4	6.8	6.25	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 150		℃
TJ	Kisaran Suhu Operating Junction	-55 kanggo 150		℃

Simbol	Paramèter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=-250uA	-20	---	---	V
△BVDSS/△TJ	Koefisien Suhu BVDSS	Referensi kanggo 25 ℃, ID=-1mA	---	-0,0212	---	V/℃
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=-4.5V, ID=-20A	---	2.1	2.7	mΩ
RDS (ON)	Statis Drain-Sumber On-Resistance2					mΩ
		VGS=-2.5V, ID=-20A	---	2.8	3.7
VGS(th)	Tegangan Ambang Gerbang	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.0	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Koefisien Suhu		---	4.8	---	mV/℃
IDSS	Arus Kebocoran Sumber Saluran	VDS=-20V, VGS=0V, TJ=25 ℃	---	---	-1	uA
IDSS	Arus Kebocoran Sumber Saluran					uA
		VDS=-20V, VGS=0V, TJ=55 ℃	---	---	-6
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktansi Maju	VDS=-5V, ID=-20A	---	100	---	S
Rg	Resistance Gate	VDS=0V, VGS=0V, f=1MHz	---	2	5	Ω
Qg	Total Gate Charge (-4.5V)	VDS=-10V, VGS=-4.5V, ID=-20A	---	100	---	nC
Qgs	Gate-Sumber Daya		---	21	---
Qgd	Gate-Drain Charge		---	32	---
Td (ing)	Wektu Tundha Aktifake	VDD=-10V, VGEN=-4.5V, RG=3Ω ID=-1A ,RL=0.5Ω	---	20	---	ns
Tr	Wektu Rise		---	50	---
Td (mati)	Wektu Tundha Pateni		---	100	---
Tf	Tiba Wektu		---	40	---
Ciss	Kapasitansi Input	VDS=-10V, VGS=0V, f=1MHz	---	4950	---	pF
Coss	Kapasitansi Output		---	380	---
Crss	Kapasitansi Transfer Mbalik		---	290	---