WSD25280DN56G N-saluran 25V 280A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan saka WSD25280DN56G MOSFET yaiku 25V, saiki yaiku 280A, resistensi yaiku 0.7mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
Titik-muatan Frekuensi Dhuwur Sinkron、Konverter Buck、Jaringan Sistem Daya DC-DC、Aplikasi Power Tool, MOSFET rokok elektronik, MOSFET pangisi daya nirkabel, MOSFET drone, MOSFET perawatan medis, MOSFET pangisi daya mobil, pengontrol MOSFET, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
WINSOK MOSFET cocog karo nomer materi merek liyane
Nxperian MOSFET PSMN1R-4ULD.
POTENS Semikonduktor MOSFET PDC262X.
paramèter MOSFET
Simbol | Paramèter | Rating | Unit |
VDS | Drain-Sumber Tegangan | 25 | V |
VGS | Gate-Source Tegangan | ±20 | V |
ID@TC=25℃ | Arus Saluran Terus(Silicon Limited)1,7 | 280 | A |
ID@TC= 70℃ | Arus Saluran Terus (Silicon Limited)1,7 | 190 | A |
IDM | Pulsed Drain Current2 | 600 | A |
EAS | Energi Longsor Pulsa Tunggal3 | 1200 | mJ |
IAS | Arus longsor | 100 | A |
PD@TC=25℃ | Total Power Dissipation4 | 83 | W |
TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ |
Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 25 | --- | --- | V |
△BVDSS/△TJ | BVDSSKoefisien Suhu | Referensi kanggo 25℃, akuD= 1 mA | --- | 0,022 | --- | V/℃ |
RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS= 10 V, ingD=20A | --- | 0.7 | 0.9 | mΩ |
VGS= 4,5 VD=20A | --- | 1.4 | 1.9 | |||
VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 1.0 | --- | 2.5 | V |
△VGS(th) | VGS(th)Koefisien Suhu | --- | -6.1 | --- | mV/℃ | |
IDSS | Arus Kebocoran Sumber Saluran | VDS= 20 V, VGS= 0 V, TJ=25℃ | --- | --- | 1 | uA |
VDS= 20 V, VGS= 0 V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Arus Kebocoran Sumber Gerbang | VGS=±20 V, VDS= 0V | --- | --- | ±100 | nA |
gfs | Transkonduktansi Maju | VDS= 5 V, akuD= 10A | --- | 40 | --- | S |
Rg | Resistance Gate | VDS= 0 V, VGS=0V, f=1MHz | --- | 3.8 | 1.5 | Ω |
Qg | Total Gate Charge (4.5V) | VDS= 15 V, VGS= 4,5 VD=20A | --- | 72 | --- | nC |
Qgs | Gate-Sumber Daya | --- | 18 | --- | ||
Qgd | Gate-Drain Charge | --- | 24 | --- | ||
Td (ing) | Wektu Tundha Aktifake | VDD= 15 V, VGEN= 10 V, RG=1Ω, akuD= 10A | --- | 33 | --- | ns |
Tr | Wektu Rise | --- | 55 | --- | ||
Td (mati) | Wektu Tundha Pateni | --- | 62 | --- | ||
Tf | Tiba Wektu | --- | 22 | --- | ||
Ciss | Kapasitansi Input | VDS= 15 V, VGS=0V, f=1MHz | --- | 7752 | --- | pF |
Coss | Kapasitansi Output | --- | 1120 | --- | ||
Crss | Kapasitansi Transfer Mbalik | --- | 650 | --- |