WSD30140DN56 N-saluran 30V 85A DFN5*6-8 WINSOK MOSFET

produk

WSD30140DN56 N-saluran 30V 85A DFN5*6-8 WINSOK MOSFET

katrangan singkat:


  • Nomer Model:WSD30140DN56
  • BVDSS:30V
  • RDSON:1,7mΩ
  • ID:85A
  • Saluran:N-saluran
  • Paket:DFN5*6-8
  • Produk Summery:Tegangan saka WSD30140DN56 MOSFET punika 30V, saiki punika 85A, resistance punika 1.7mΩ, saluran N-saluran, lan paket punika DFN5 * 6-8.
  • Aplikasi:Rokok elektronik, pangisi daya nirkabel, drone, perawatan medis, pangisi daya mobil, pengontrol, produk digital, piranti cilik, elektronik konsumen, lsp.
  • Detail Produk

    Aplikasi

    Tag produk

    Katrangan Umum

    WSD30140DN56 minangka MOSFET saluran N-kanal kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget nyedhiyakake RDSON lan biaya gerbang sing apik kanggo aplikasi konverter buck sinkron. WSD30140DN56 tundhuk karo RoHS lan syarat produk ijo, 100% EAS njamin, linuwih fungsi lengkap disetujoni.

    Fitur

    Teknologi trench kapadhetan sel dhuwur sing canggih, pangisian gerbang ultra-rendah, atenuasi efek CdV/dt sing apik, jaminan 100% EAS, piranti ijo kasedhiya

    Aplikasi

    Sinkronisasi titik frekuensi dhuwur, konverter dolar, sistem daya DC-DC jaringan, aplikasi alat listrik, rokok elektronik, pangisi daya nirkabel, drone, perawatan medis, pangisi daya mobil, pengontrol, produk digital, piranti cilik, elektronik konsumen

    nomer materi sing cocog

    AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314. ING NTMFS4847N. VISHAY SiRA62DP. ST STL86N3LLH6AG. INFINEON BSC050N03MSG. TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A. NXP PH2520U Kab. TOSHIBA TPH4R803PL TPH3R203NL. ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN. PANJIT PJQ5410. AP AP3D5R0MT. NIKO PK610SA, PK510BA. POTENS PDC3803R

    Paramèter penting

    Simbol Paramèter Rating Unit
    VDS Drain-Sumber Tegangan 30 V
    VGS Tegangan Gate-Sumber ±20 V
    ID@TC=25 ℃ Arus Saluran Terus, VGS @ 10V1,7 85 A
    ID@TC=70 ℃ Arus Saluran Terus, VGS @ 10V1,7 65 A
    IDM Pulsed Drain Current2 300 A
    PD@TC=25 ℃ Total Dissipasi Daya4 50 W
    TSTG Kisaran Suhu Panyimpenan -55 kanggo 150
    TJ Kisaran Suhu Operating Junction -55 kanggo 150
    Simbol Paramèter kahanan Min. Tipe. Maks. Unit
    BVDSS Tegangan Pecah Sumber Saluran VGS=0V, ID=250uA 30 --- --- V
    △BVDSS/△TJ Koefisien Suhu BVDSS Referensi kanggo 25 ℃, ID = 1mA --- 0.02 --- V/℃
    RDS (ON) Statis Drain-Sumber On-Resistance2 VGS=10V, ID=20A --- 1.7 2.4
    VGS=4.5V, ID=15A 2.5 3.3
    VGS(th) Tegangan Ambang Gerbang VGS = VDS , ID = 250uA 1.2 1.7 2.5 V
    Arus Kebocoran Sumber Saluran VDS=24V, VGS=0V, TJ=25℃ --- --- 1 uA
    IDSS VDS=24V, VGS=0V, TJ=55 ℃ --- --- 5
    IGSS Arus Kebocoran Sumber Gerbang VGS=±20V, VDS=0V --- --- ± 100 nA
    gfs Transkonduktansi Maju VDS=5V, ID=20A --- 90 --- S
    Qg Total Gate Charge (4.5V) VDS=15V, VGS=4.5V, ID=20A --- 26 --- nC
    Qgs Gate-Sumber Daya --- 9.5 ---
    Qgd Gate-Drain Charge --- 11.4 ---
    Td (ing) Wektu Tundha Aktifake VDD=15V, VGEN=10V, RG=3Ω, RL=0.75Ω. --- 11 --- ns
    Tr Wektu Rise --- 6 ---
    Td (mati) Wektu Tundha Pateni --- 38.5 ---
    Tf Tiba Wektu --- 10 ---
    Ciss Kapasitansi Input VDS=15V, VGS=0V, f=1MHz --- 3000 --- pF
    Coss Kapasitansi Output --- 1280 ---
    Crss Kapasitansi Transfer Mbalik --- 160 ---

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