WSD30150ADN56 N-saluran 30V 145A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD30150DN56 MOSFET yaiku 30V, saiki yaiku 150A, resistensi yaiku 1.8mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
E-MOSFET rokok, MOSFET pangisi daya nirkabel, MOSFET drone, MOSFET perawatan medis, MOSFET pangisi daya mobil, MOSFET pengontrol, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
WINSOK MOSFET cocog karo nomer materi merek liyane
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TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB, PKE24BB.
POTENS Semikonduktor MOSFET PDC392X.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit |
| VDS | Drain-Sumber Tegangan | 30 | V |
| VGS | Gate-Source Tegangan | ±20 | V |
| ID@TC=25℃ | Arus Saluran Kontinu, VGS@10V1,7 | 150 | A |
| ID@TC=100℃ | Arus Saluran Kontinu, VGS@10V1,7 | 83 | A |
| IDM | Pulsed Drain Current2 | 200 | A |
| EAS | Energi Longsor Pulsa Tunggal3 | 125 | mJ |
| IAS | Arus longsor | 50 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 62.5 | W |
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
| TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ |
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisien Suhu | Referensi kanggo 25℃, akuD= 1 mA | --- | 0.02 | --- | V/℃ |
| RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS= 10 V, ingD=20A | --- | 1.8 | 2.4 | mΩ |
| VGS= 4,5 VD= 15A | 2.4 | 3.2 | ||||
| VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 1.4 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Koefisien Suhu | --- | -6.1 | --- | mV/℃ | |
| IDSS | Arus Kebocoran Sumber Saluran | VDS= 24 V, VGS= 0 V, TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24 V, VGS= 0 V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Arus Kebocoran Sumber Gerbang | VGS=±20 V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktansi Maju | VDS= 5 V, akuD= 10A | --- | 27 | --- | S |
| Rg | Resistance Gate | VDS= 0 V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS= 15 V, VGS= 4,5 VD=30A | --- | 26 | --- | nC |
| Qgs | Gate-Sumber Daya | --- | 9.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 11.4 | --- | ||
| Td (ing) | Wektu Tundha Aktifake | VDD= 15 V, VGEN= 10 V, RG=6Ω, akuD=1A, RL=15Ω. | --- | 20 | --- | ns |
| Tr | Wektu Rise | --- | 12 | --- | ||
| Td (mati) | Wektu Tundha Pateni | --- | 69 | --- | ||
| Tf | Tiba Wektu | --- | 29 | --- | ||
| Ciss | Kapasitansi Input | VDS= 15 V, VGS=0V, f=1MHz | 2560 | 3200 | 3850 | pF |
| Coss | Kapasitansi Output | 560 | 680 | 800 | ||
| Crss | Kapasitansi Transfer Mbalik | 260 | 320 | 420 |
