WSD3023DN56 N-Ch lan P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

katrangan singkat:

Nomer Model:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Saluran:N-Ch lan P-Channel

Paket:DFN5*6-8

Produk Summery:Tegangan WSD3023DN56 MOSFET yaiku 30V / -30V, saiki 14A / -12A, resistensi 14mΩ / 23mΩ, saluran N-Ch lan P-Channel, lan paket kasebut DFN5 * 6-8.

Aplikasi:Drone, motor, elektronik otomotif, peralatan utama.

Kirimi email kanggo kita PDF

Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSD3023DN56 minangka trench N-ch lan P-ch MOSFET kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo sebagian besar aplikasi konverter buck sinkron. WSD3023DN56 nyukupi syarat RoHS lan Produk Ijo 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

Fitur

Teknologi Trench kapadhetan sel dhuwur sing canggih, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.

Aplikasi

Konverter Buck Sinkron Titik Frekuensi Tinggi kanggo MB/NB/UMPC/VGA, Sistem Daya DC-DC Jaringan, Inverter Lampu Belakang CCFL, Drone, motor, elektronik otomotif, peralatan utama.

nomer materi sing cocog

PANJIT PJQ5606

Paramèter penting

Simbol	Paramèter	Rating		Unit
Simbol	Paramèter	N-Ch	P-Ch	Unit
VDS	Drain-Sumber Tegangan	30	-30	V
VGS	Tegangan Gate-Sumber	±20	±20	V
ID	Arus Saluran Terus, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Arus Saluran Terus, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Saiki Diuji, VGS(NP)=10V	48	-48	A
EAS c	Energi Longsor, Pulsa Tunggal, L=0.5mH	20	20	mJ
IAS c	Arus Longsor, Pulsa Tunggal, L=0.5mH	9	-9	A
PD	Total Power Dissipation, Ta = 25 ℃	5.25	5.25	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 175	-55 kanggo 175	℃
TJ	Kisaran Suhu Operating Junction	175	175	℃
RqJA b	Thermal Resistance-Junction to Ambient, Steady State	60	60	℃ / W
RqJC	Thermal Resistance-Junction to Case,Steady State	6.25	6.25	℃ / W

Simbol	Paramèter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=250uA	30	---	---	V
RDS(ON)d	Statis Saluran-Sumber On-Resistance	VGS=10V, ID=8A	---	14	18.5	mΩ
RDS(ON)d	Statis Saluran-Sumber On-Resistance	VGS=4.5V, ID=5A	---	17	25	mΩ
VGS(th)	Tegangan Ambang Gerbang	VGS = VDS , ID = 250uA	1.3	1.8	2.3	V
IDSS	Arus Kebocoran Sumber Saluran	VDS=20V, VGS=0V, TJ=25 ℃	---	---	1	uA
IDSS	Arus Kebocoran Sumber Saluran	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±20V, VDS=0V	---	---	± 100	nA
Rg	Resistance Gate	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Total Biaya Gate	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Sumber Daya		---	1.0	---
Qgde	Gate-Drain Charge		---	2.8	---
Td(ing)e	Wektu Tundha Aktifake	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Wektu Rise		---	8.6	---
Td (mati)e	Wektu Tundha Pateni		---	16	---
Tfe	Tiba Wektu		---	3.6	---
Cisse	Kapasitansi Input	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Cosse	Kapasitansi Output		---	95	---
Crsse	Kapasitansi Transfer Mbalik		---	55	---