WSD3023DN56 N-Ch lan P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

katrangan singkat:

Nomer Model:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Saluran:N-Ch lan P-Channel

Paket:DFN5*6-8

Produk Summery:Tegangan WSD3023DN56 MOSFET yaiku 30V / -30V, saiki 14A / -12A, resistensi 14mΩ / 23mΩ, saluran N-Ch lan P-Channel, lan paket kasebut DFN5 * 6-8.

Aplikasi:Drone, motor, elektronik otomotif, peralatan utama.

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Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSD3023DN56 minangka MOSFET N-ch lan P-ch kinerja paling dhuwur kanthi kapadhetan sel dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo umume aplikasi konverter buck sinkron. WSD3023DN56 nyukupi syarat RoHS lan Produk Ijo 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

Fitur

Teknologi Trench kapadhetan sel dhuwur sing canggih, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.

Aplikasi

Konverter Buck Sinkron Titik Frekuensi Tinggi kanggo MB/NB/UMPC/VGA, Sistem Daya DC-DC Jaringan, Inverter Lampu Belakang CCFL, Drone, motor, elektronik otomotif, peralatan utama.

nomer materi sing cocog

PANJIT PJQ5606

Paramèter penting

Simbol	Parameter	Rating		Unit
Simbol	Parameter	N-Ch	P-Ch	Unit
VDS	Drain-Sumber Tegangan	30	-30	V
VGS	Tegangan Gate-Sumber	±20	±20	V
ID	Arus Saluran Terus, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Arus Saluran Terus, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Saiki Diuji, VGS(NP)=10V	48	-48	A
EAS c	Energi Longsor, Pulsa Tunggal, L=0.5mH	20	20	mJ
IAS c	Arus Longsor, Pulsa Tunggal, L=0.5mH	9	-9	A
PD	Boros Daya Total, Ta = 25 ℃	5.25	5.25	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 175	-55 kanggo 175	℃
TJ	Kisaran Suhu Operating Junction	175	175	℃
RqJA b	Thermal Resistance-Junction to Ambient, Steady State	60	60	℃ / W
RqJC	Thermal Resistance-Junction to Case,Steady State	6.25	6.25	℃ / W

Simbol	Parameter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=250uA	30	---	---	V
RDS(ON)d	Statis Saluran-Sumber On-Resistance	VGS=10V, ID=8A	---	14	18.5	mΩ
RDS(ON)d	Statis Saluran-Sumber On-Resistance	VGS=4.5V, ID=5A	---	17	25	mΩ
VGS(th)	Tegangan Ambang Gerbang	VGS = VDS , ID = 250uA	1.3	1.8	2.3	V
IDSS	Arus Kebocoran Sumber Saluran	VDS=20V, VGS=0V, TJ=25 ℃	---	---	1	uA
IDSS	Arus Kebocoran Sumber Saluran	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±20V, VDS=0V	---	---	± 100	nA
Rg	Resistance Gate	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Total Biaya Gate	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Sumber Daya		---	1.0	---
Qgde	Gate-Drain Charge		---	2.8	---
Td(ing)e	Wektu Tundha Aktifake	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Wektu Rise		---	8.6	---
Td (mati)e	Wektu Tundha Pateni		---	16	---
Tfe	Tiba Wektu		---	3.6	---
Cisse	Kapasitansi Input	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Cosse	Kapasitansi Output		---	95	---
Crsse	Kapasitansi Transfer Mbalik		---	55	---