WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan saka WSD4280DN22 MOSFET punika -15V, saiki -4.6A, resistance punika 47mΩ, saluran punika Dual P-channel, lan paket punika DFN2X2-6L.
Area aplikasi WINSOK MOSFET
Ngalih pamblokiran bidirectional; Aplikasi konversi DC-DC; Ngisi daya baterei Li; MOSFET rokok elektronik, MOSFET pangisi daya nirkabel, MOSFET pangisi daya mobil, MOSFET pengontrol, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
WINSOK MOSFET cocog karo nomer materi merek liyane
PANJIT MOSFET PJQ2815
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit |
| VDS | Drain-Sumber Tegangan | -15 | V |
| VGS | Tegangan Gate-Sumber | ± 8 | V |
| ID@Tc=25 ℃ | Arus Saluran Kontinu, VGS= -4,5 V1 | -4.6 | A |
| IDM | 300μS Pulsed Drain Current, (VGS=-4,5 V) | -15 | A |
| PD | Daya Dissipation Derating ndhuwur TA = 25°C (Cathetan 2) | 1.9 | W |
| TSTG, TJ | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient1 | 65 | ℃ / W |
| RθJC | Thermal Resistance Junction-Case1 | 50 | ℃ / W |
Karakteristik Listrik (TJ=25 ℃, kajaba kacathet)
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD=-250uA | -15 | --- | --- | V |
| △BVDSS/△TJ | Koefisien Suhu BVDSS | Referensi kanggo 25 ℃, ID=-1mA | --- | -0.01 | --- | V/℃ |
| RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS= -4,5 V, ID=-1A | --- | 47 | 61 | mΩ |
| VGS=-2,5 V, ID=-1A | --- | 61 | 80 | |||
| VGS= -1,8 V, ID=-1A | --- | 90 | 150 | |||
| VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD=-250uA | -0.4 | -0.62 | -1.2 | V |
| △VGS(th) | VGS(th)Koefisien Suhu | --- | 3.13 | --- | mV/℃ | |
| IDSS | Arus Kebocoran Sumber Saluran | VDS=-10 V, VGS= 0 V, TJ=25 ℃ | --- | --- | -1 | uA |
| VDS=-10 V, VGS= 0 V, TJ=55 ℃ | --- | --- | -5 | |||
| IGSS | Arus Kebocoran Sumber Gerbang | VGS= ± 12V, VDS= 0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktansi Maju | VDS=-5V, akuD=-1A | --- | 10 | --- | S |
| Rg | Resistance Gate | VDS= 0 V, VGS=0V, f=1MHz | --- | 2 | --- | Ω |
| Qg | Total Gate Charge (-4.5V) | VDS=-10 V, VGS= -4,5 V, ID=-4.6A | --- | 9.5 | --- | nC |
| Qgs | Gate-Sumber Daya | --- | 1.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.3 | --- | ||
| Td (ing) | Wektu Tundha Aktifake | VDD=-10 V,VGS=-4,5 V, RG= 1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Wektu Rise | --- | 16 | --- | ||
| Td (mati) | Wektu Tundha Pateni | --- | 30 | --- | ||
| Tf | Tiba Wektu | --- | 10 | --- | ||
| Ciss | Kapasitansi Input | VDS=-10 V, VGS=0V, f=1MHz | --- | 781 | --- | pF |
| Coss | Kapasitansi Output | --- | 98 | --- | ||
| Crss | Kapasitansi Transfer Mbalik | --- | 96 | --- |
