WSD45N10GDN56 N-saluran 100V 45A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan saka WSD45N10GDN56 MOSFET yaiku 100V, saiki yaiku 45A, resistensi yaiku 14.5mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
MOSFET e-rokok, MOSFET pangisi daya nirkabel, MOSFET motor, MOSFET drone, MOSFET perawatan medis, MOSFET pangisi daya mobil, MOSFET pengontrol, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
WINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semikonduktor MOSFET PDC966X.
paramèter MOSFET
| Simbol | Parameter | Rating | Unit |
| VDS | Drain-Sumber Tegangan | 100 | V |
| VGS | Gate-Source Tegangan | ±20 | V |
| ID@TC=25℃ | Arus Saluran Kontinu, VGS@10V | 45 | A |
| ID@TC=100℃ | Arus Saluran Kontinu, VGS@10V | 33 | A |
| ID@TA=25℃ | Arus Saluran Kontinu, VGS@10V | 12 | A |
| ID@TA= 70℃ | Arus Saluran Kontinu, VGS@10V | 9.6 | A |
| IDMa | Pulsed Drain Current | 130 | A |
| EASb | Energi Longsor Pulsa Tunggal | 169 | mJ |
| IASb | Arus longsor | 26 | A |
| PD@TC=25℃ | Total Power Dissipation | 95 | W |
| PD@TA=25℃ | Total Power Dissipation | 5.0 | W |
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
| TJ | Operating Junction Range Suhu | -55 kanggo 150 | ℃ |
| Simbol | Parameter | kahanan | Min. | Tipe. | Maks. | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | Koefisien Suhu BVDSS | Referensi kanggo 25℃, akuD= 1 mA | --- | 0.0 | --- | V/℃ |
| RDS (ON)d | Statis Saluran-Sumber On-Resistance2 | VGS= 10 V, ingD=26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koefisien Suhu | --- | -5 | mV/℃ | ||
| IDSS | Arus Kebocoran Sumber Saluran | VDS= 80 V, VGS= 0 V, TJ=25℃ | --- | - | 1 | uA |
| VDS= 80 V, VGS= 0 V, TJ=55℃ | --- | - | 30 | |||
| IGSS | Arus Kebocoran Sumber Gerbang | VGS=±20 V, VDS= 0V | --- | - | ±100 | nA |
| Rge | Resistance Gate | VDS= 0 V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Total Gate Charge (10V) | VDS= 50 V, VGS= 10 V, ingD=26A | --- | 42 | 59 | nC |
| Qgse | Gate-Sumber Daya | --- | 12 | -- | ||
| Qgde | Gate-Drain Charge | --- | 12 | --- | ||
| Td (ing)e | Wektu Tundha Aktifake | VDD= 30 V, VGEN= 10 V, RG=6Ω ID=1A,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Wektu Rise | --- | 9 | 17 | ||
| Td (mati)e | Wektu Tundha Pateni | --- | 36 | 65 | ||
| Tfe | Tiba Wektu | --- | 22 | 40 | ||
| Cisse | Kapasitansi Input | VDS= 30 V, VGS=0V, f=1MHz | --- | 1800 | --- | pF |
| Cosse | Kapasitansi Output | --- | 215 | --- | ||
| Crsse | Kapasitansi Transfer Mbalik | --- | 42 | --- |
