WSD6040DN56 N-saluran 60V 36A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD6040DN56 MOSFET yaiku 60V, saiki yaiku 36A, resistensi yaiku 14mΩ, saluran kasebut saluran N, lan paket kasebut DFN5X6-8.
Area aplikasi WINSOK MOSFET
MOSFET e-rokok, MOSFET pangisi daya nirkabel, MOSFET motor, MOSFET drone, MOSFET perawatan medis, MOSFET pangisi daya mobil, MOSFET pengontrol, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
WINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semikonduktor MOSFET PDC6964X.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit | ||
| VDS | Drain-Sumber Tegangan | 60 | V | ||
| VGS | Tegangan Gate-Sumber | ±20 | V | ||
| ID | Arus Saluran Terus | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Arus Saluran Terus | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsed Drain Current | TC=25°C | 140 | A | |
| PD | Boros Daya Maksimum | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Boros Daya Maksimum | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Arus Longsor, Pulsa tunggal | L=0,5mH | 16 | A | |
| EASc | Energi Longsor Pulsa Tunggal | L=0,5mH | 64 | mJ | |
| IS | Arus Maju Terus Dioda | TC=25°C | 18 | A | |
| TJ | Suhu Junction maksimum | 150 | ℃ | ||
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ | ||
| RθJAb | Thermal Resistance Junction kanggo lingkungan | Steady State | 60 | ℃/W | |
| RθJC | Thermal Resistance-Junction kanggo Case | Steady State | 3.3 | ℃/W | |
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit | |
| Statis | |||||||
| V(BR)DSS | Tegangan Pecah Sumber Saluran | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Arus Kebocoran Gerbang | VGS = ±20V, VDS = 0V | ± 100 | nA | |||
| On Karakteristik | |||||||
| VGS(TH) | Tegangan Ambang Gerbang | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS (ing)d | Drain-Sumber On-Negara Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Ngalih | |||||||
| Qg | Total Biaya Gate | VDS = 30 V VGS = 10 V ID=25A | 42 | nC | |||
| Qgs | Gate-Sour Charge | 6.4 | nC | ||||
| Qgd | Gate-Drain Charge | 9.6 | nC | ||||
| td (ing) | Aktifake Wektu Tundha | VGEN=10V VDD = 30 V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Nguripake Wektu Rise | 9 | ns | ||||
| td (mati) | Pateni Wektu Tundha | 58 | ns | ||||
| tf | Pateni Wektu Tiba | 14 | ns | ||||
| Rg | resistensi Gat | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Dinamis | |||||||
| Ciss | Ing Kapasitansi | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Kapasitansi Out | 140 | pF | ||||
| Crss | Kapasitansi Transfer Mbalik | 100 | pF | ||||
| Karakteristik Dioda Sumber Saluran lan Rating Maksimum | |||||||
| IS | Sumber Terusan Saiki | VG=VD=0V , Daya Arus | 18 | A | |||
| ISM | Pulsed Source Current3 | 35 | A | ||||
| VSDd | Tegangan Maju Dioda | ISD = 20A , VGS = 0V | 0.8 | 1.3 | V | ||
| trr | Wektu Recovery mbalikke | ISD= 25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery daya | 33 | nC | ||||
