WSD60N10GDN56 N-saluran 100V 60A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD60N10GDN56 MOSFET yaiku 100V, saiki yaiku 60A, resistensi yaiku 8.5mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.
Area aplikasi WINSOK MOSFET
MOSFET e-rokok, MOSFET pangisi daya nirkabel, MOSFET motor, MOSFET drone, MOSFET perawatan medis, MOSFET pangisi daya mobil, MOSFET pengontrol, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
Kolom aplikasi MOSFETWINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFNSHAY MOSFET1,IR87ADP.INFINEB3. L,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semikonduktor MOSFET PDC92X.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit |
| VDS | Drain-Sumber Tegangan | 100 | V |
| VGS | Tegangan Gate-Sumber | ±20 | V |
| ID@TC=25 ℃ | Arus Saluran Terus | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Energi Longsor, Pulsa tunggal | 100 | mJ |
| PD@TC=25 ℃ | Total Power Dissipation | 125 | W |
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
| TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ |
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 100 | --- | --- | V |
| Statis Saluran-Sumber On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS (ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Arus Kebocoran Sumber Saluran | VDS= 80 V, VGS= 0 V, TJ=25 ℃ | --- | --- | 1 | uA |
| IGSS | Arus Kebocoran Sumber Gerbang | VGS= ± 20 V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Total Gate Charge (10V) | VDS= 50 V, VGS= 10 V, ingD= 25A | --- | 49.9 | --- | nC |
| Qgs | Gate-Sumber Daya | --- | 6.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12.4 | --- | ||
| Td (ing) | Wektu Tundha Aktifake | VDD= 50 V, VGS= 10 V,RG= 2,2Ω, ID= 25A | --- | 20.6 | --- | ns |
| Tr | Wektu Rise | --- | 5 | --- | ||
| Td (mati) | Wektu Tundha Pateni | --- | 51.8 | --- | ||
| Tf | Tiba Wektu | --- | 9 | --- | ||
| Ciss | Kapasitansi Input | VDS= 50 V, VGS=0V, f=1MHz | --- | 2604 | --- | pF |
| Coss | Kapasitansi Output | --- | 362 | --- | ||
| Crss | Kapasitansi Transfer Mbalik | --- | 6.5 | --- | ||
| IS | Sumber Terusan Saiki | VG=VD= 0V, Daya Arus | --- | --- | 60 | A |
| ISP | Sumber Pulsed Arus | --- | --- | 210 | A | |
| VSD | Tegangan Maju Dioda | VGS= 0V, akuS= 12A, TJ=25 ℃ | --- | --- | 1.3 | V |
| trr | Wektu Recovery mbalikke | IF=12A,dI/dt=100A/µs,TJ=25 ℃ | --- | 60.4 | --- | nS |
| Qrr | Reverse Recovery daya | --- | 106.1 | --- | nC |
