WSD60N12GDN56 N-saluran 120V 70A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD60N12GDN56 MOSFET yaiku 120V, saiki yaiku 70A, resistensi yaiku 10mΩ, saluran kasebut saluran N, lan paket kasebut DFN5X6-8.
Area aplikasi WINSOK MOSFET
MOSFET peralatan medis, MOSFET drone, MOSFET sumber daya PD, MOSFET sumber daya LED, MOSFET peralatan industri.
Kolom aplikasi MOSFETWINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semikonduktor MOSFET PDC974X.
paramèter MOSFET
Simbol | Paramèter | Rating | Unit |
VDS | Drain-Sumber Tegangan | 120 | V |
VGS | Tegangan Gate-Sumber | ±20 | V |
ID@TC=25 ℃ | Arus Saluran Terus | 70 | A |
IDP | Pulsed Drain Current | 150 | A |
EAS | Energi Longsor, Pulsa tunggal | 53.8 | mJ |
PD@TC=25 ℃ | Total Power Dissipation | 140 | W |
TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ |
Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 120 | --- | --- | V |
Statis Saluran-Sumber On-Resistance | VGS=10V,ID=10A. | --- | 10 | 15 | mΩ | |
RDS (ON) | VGS=4.5V,ID=10A. | --- | 18 | 25 | mΩ | |
VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 1.2 | --- | 2.5 | V |
IDSS | Arus Kebocoran Sumber Saluran | VDS= 80 V, VGS= 0 V, TJ=25 ℃ | --- | --- | 1 | uA |
IGSS | Arus Kebocoran Sumber Gerbang | VGS= ± 20 V, VDS= 0V | --- | --- | ± 100 | nA |
Qg | Total Gate Charge (10V) | VDS= 50 V, VGS= 10 V, ingD= 25A | --- | 33 | --- | nC |
Qgs | Gate-Sumber Daya | --- | 5.6 | --- | ||
Qgd | Gate-Drain Charge | --- | 7.2 | --- | ||
Td (ing) | Wektu Tundha Aktifake | VDD= 50 V, VGS= 10 V, RG= 2Ω, akuD= 25A | --- | 22 | --- | ns |
Tr | Wektu Rise | --- | 10 | --- | ||
Td (mati) | Wektu Tundha Pateni | --- | 85 | --- | ||
Tf | Tiba Wektu | --- | 112 | --- | ||
Ciss | Kapasitansi Input | VDS= 50 V, VGS=0V, f=1MHz | --- | 2640 | --- | pF |
Coss | Kapasitansi Output | --- | 330 | --- | ||
Crss | Kapasitansi Transfer Mbalik | --- | 11 | --- | ||
IS | Sumber Terusan Saiki | VG=VD= 0V, Daya Arus | --- | --- | 50 | A |
ISP | Sumber Pulsed Arus | --- | --- | 150 | A | |
VSD | Tegangan Maju Dioda | VGS= 0V, akuS= 12A, TJ=25 ℃ | --- | --- | 1.3 | V |
trr | Wektu Recovery mbalikke | IF=25A,dI/dt=100A/µs,TJ=25 ℃ | --- | 62 | --- | nS |
Qrr | Reverse Recovery daya | --- | 135 | --- | nC |