WSD60N12GDN56 N-saluran 120V 70A DFN5X6-8 WINSOK MOSFET

produk

WSD60N12GDN56 N-saluran 120V 70A DFN5X6-8 WINSOK MOSFET

katrangan singkat:

Nomer Bagian:WSD60N12GDN56

BVDSS:120V

ID:70A

RDSON:10mΩ

Saluran:N-saluran

Paket:DFN5X6-8


Detail Produk

Aplikasi

Tag produk

Ringkesan produk WINSOK MOSFET

Tegangan WSD60N12GDN56 MOSFET yaiku 120V, saiki yaiku 70A, resistensi yaiku 10mΩ, saluran kasebut saluran N, lan paket kasebut DFN5X6-8.

Area aplikasi WINSOK MOSFET

MOSFET peralatan medis, MOSFET drone, MOSFET sumber daya PD, MOSFET sumber daya LED, MOSFET peralatan industri.

Kolom aplikasi MOSFETWINSOK MOSFET cocog karo nomer materi merek liyane

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semikonduktor MOSFET PDC974X.

paramèter MOSFET

Simbol

Paramèter

Rating

Unit

VDS

Drain-Sumber Tegangan

120

V

VGS

Tegangan Gate-Sumber

±20

V

ID@TC=25 ℃

Arus Saluran Terus

70

A

IDP

Pulsed Drain Current

150

A

EAS

Energi Longsor, Pulsa tunggal

53.8

mJ

PD@TC=25 ℃

Total Power Dissipation

140

W

TSTG

Kisaran Suhu Panyimpenan

-55 kanggo 150

TJ 

Kisaran Suhu Operating Junction

-55 kanggo 150

 

Simbol

Paramèter

kahanan

Min.

Tipe.

Maks.

Unit

BVDSS 

Tegangan Pecah Sumber Saluran VGS= 0V, akuD= 250uA

120

---

---

V

  Statis Saluran-Sumber On-Resistance VGS=10V,ID=10A.

---

10

15

RDS (ON)

VGS=4.5V,ID=10A.

---

18

25

VGS(th)

Tegangan Ambang Gerbang VGS=VDS, akuD= 250uA

1.2

---

2.5

V

IDSS

Arus Kebocoran Sumber Saluran VDS= 80 V, VGS= 0 V, TJ=25 ℃

---

---

1

uA

IGSS

Arus Kebocoran Sumber Gerbang VGS= ± 20 V, VDS= 0V

---

---

± 100

nA

Qg 

Total Gate Charge (10V) VDS= 50 V, VGS= 10 V, ingD= 25A

---

33

---

nC

Qgs 

Gate-Sumber Daya

---

5.6

---

Qgd 

Gate-Drain Charge

---

7.2

---

Td (ing)

Wektu Tundha Aktifake VDD= 50 V, VGS= 10 V,

RG= 2Ω, akuD= 25A

---

22

---

ns

Tr 

Wektu Rise

---

10

---

Td (mati)

Wektu Tundha Pateni

---

85

---

Tf 

Tiba Wektu

---

112

---

Ciss 

Kapasitansi Input VDS= 50 V, VGS=0V, f=1MHz

---

2640

---

pF

Coss

Kapasitansi Output

---

330

---

Crss 

Kapasitansi Transfer Mbalik

---

11

---

IS 

Sumber Terusan Saiki VG=VD= 0V, Daya Arus

---

---

50

A

ISP

Sumber Pulsed Arus

---

---

150

A

VSD

Tegangan Maju Dioda VGS= 0V, akuS= 12A, TJ=25 ℃

---

---

1.3

V

trr 

Wektu Recovery mbalikke IF=25A,dI/dt=100A/µs,TJ=25 ℃

---

62

---

nS

Qrr 

Reverse Recovery daya

---

135

---

nC

 


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