WSD75100DN56 N-saluran 75V 100A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD75100DN56 MOSFET yaiku 75V, saiki yaiku 100A, resistensi yaiku 5.3mΩ, saluran kasebut saluran N, lan paket kasebut DFN5X6-8.
Area aplikasi WINSOK MOSFET
MOSFET e-rokok, MOSFET pangisi daya nirkabel, MOSFET drone, MOSFET perawatan medis, MOSFET pangisi daya mobil, MOSFET pengontrol, MOSFET produk digital, MOSFET peralatan rumah tangga cilik, MOSFET elektronik konsumen.
WINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6276 X.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit |
| VDS | Drain-Sumber Tegangan | 75 | V |
| VGS | Gate-Source Tegangan | ±25 | V |
| TJ | Suhu Junction maksimum | 150 | °C |
| ID | Kisaran Suhu Panyimpenan | -55 kanggo 150 | °C |
| IS | Arus Maju Terus Dioda, TC=25°C | 50 | A |
| ID | Arus Saluran Kontinu, VGS= 10 V, TC=25°C | 100 | A |
| Arus Saluran Kontinu, VGS= 10 V, TC=100°C | 73 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 400 | A |
| PD | Disipasi Daya Maksimum, TC=25°C | 155 | W |
| Disipasi Daya Maksimum, TC=100°C | 62 | W | |
| RθJA | Resistansi Termal-Junction to Ambient ,t = 10s ̀ | 20 | °C |
| Thermal Resistance-Junction to Ambient, Steady State | 60 | °C | |
| RqJC | Thermal Resistance-Junction kanggo Case | 0.8 | °C |
| IAS | Arus Longsor, Pulsa Tunggal, L=0.5mH | 30 | A |
| EAS | Energi Longsor, Pulsa Tunggal, L=0.5mH | 225 | mJ |
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS= 0V, akuD= 250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoefisien Suhu | Referensi kanggo 25℃, akuD= 1 mA | --- | 0.043 | --- | V/℃ |
| RDS (ON) | Statis Saluran-Sumber On-Resistance2 | VGS = 10 V, ID= 25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Tegangan Ambang Gerbang | VGS=VDS, akuD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koefisien Suhu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Arus Kebocoran Sumber Saluran | VDS= 48 V, VGS= 0 V, TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48 V, VGS= 0 V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Arus Kebocoran Sumber Gerbang | VGS=±20 V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Transkonduktansi Maju | VDS= 5 V, akuD=20A | --- | 50 | --- | S |
| Rg | Resistance Gate | VDS= 0 V, VGS=0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Total Gate Charge (10V) | VDS= 20 V, VGS= 10 V, ingD=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Sumber Daya | --- | 20 | --- | ||
| Qgd | Gate-Drain Charge | --- | 17 | --- | ||
| Td (ing) | Wektu Tundha Aktifake | VDD= 30 V, VGEN= 10 V, RG=1Ω, akuD=1A,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Wektu Rise | --- | 14 | 26 | ||
| Td (mati) | Wektu Tundha Pateni | --- | 60 | 108 | ||
| Tf | Tiba Wektu | --- | 37 | 67 | ||
| Ciss | Kapasitansi Input | VDS= 20 V, VGS=0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Kapasitansi Output | 245 | 395 | 652 | ||
| Crss | Kapasitansi Transfer Mbalik | 100 | 195 | 250 |
