WSD75N12GDN56 N-saluran 120V 75A DFN5X6-8 WINSOK MOSFET
Ringkesan produk WINSOK MOSFET
Tegangan WSD75N12GDN56 MOSFET yaiku 120V, saiki yaiku 75A, resistensi yaiku 6mΩ, saluran kasebut saluran N, lan paket kasebut DFN5X6-8.
Area aplikasi WINSOK MOSFET
MOSFET peralatan medis, MOSFET drone, MOSFET sumber daya PD, MOSFET sumber daya LED, MOSFET peralatan industri.
Kolom aplikasi MOSFETWINSOK MOSFET cocog karo nomer materi merek liyane
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
paramèter MOSFET
| Simbol | Paramèter | Rating | Unit |
| VDSS | Drain-to-Source Voltage | 120 | V |
| VGS | Tegangan Gate-kanggo-Sumber | ±20 | V |
| ID | 1 Arus Saluran Terus (Tc=25 ℃) | 75 | A |
| ID | 1 Arus Saluran Terus (Tc=70 ℃) | 70 | A |
| IDM | Pulsed Drain Current | 320 | A |
| IAR | Arus longsor pulsa tunggal | 40 | A |
| EASa | Energi longsor pulsa tunggal | 240 | mJ |
| PD | Dissipasi Daya | 125 | W |
| TJ, Ttg | Operating Junction lan Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
| TL | Suhu maksimum kanggo Soldering | 260 | ℃ |
| RθJC | Resistance Thermal, Junction-to-Case | 1.0 | ℃ / W |
| RθJA | Resistance Thermal, Junction-to-Ambient | 50 | ℃ / W |
| Simbol | Paramèter | Syarat Test | Min. | Tipe. | Maks. | Unit |
| VDSS | Saluran menyang Sumber Tegangan Breakdown | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Saluran menyang Sumber Kebocoran Saiki | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS(F) | Gate kanggo Sumber Maju Bocor | VGS = + 20 V | -- | -- | 100 | nA |
| IGSS(R) | Gate menyang Sumber Reverse Leakage | VGS =-20 V | -- | -- | -100 | nA |
| VGS(TH) | Tegangan Ambang Gerbang | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Saluran-kanggo-Sumber On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Transkonduktansi Maju | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Kapasitansi Input | VGS = 0V VDS = 50V f =1.0 MHz | -- | 4282 | -- | pF |
| Coss | Kapasitansi Output | -- | 429 | -- | pF | |
| Crss | Kapasitansi Transfer Mbalik | -- | 17 | -- | pF | |
| Rg | Resistance gerbang | -- | 2.5 | -- | Ω | |
| td (ON) | Aktifake Wektu Tundha | ID = 20A VDS = 50V VGS = 10 V RG = 5Ω | -- | 20 | -- | ns |
| tr | Wektu Rise | -- | 11 | -- | ns | |
| td (OFF) | Wektu Tundha Pateni | -- | 55 | -- | ns | |
| tf | Tiba Wektu | -- | 28 | -- | ns | |
| Qg | Total Biaya Gate | VGS = 0 ~ 10V VDS = 50VID = 20A | -- | 61.4 | -- | nC |
| Qgs | Gate Source Charge | -- | 17.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 14.1 | -- | nC | |
| IS | Dioda Maju Arus | TC = 25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse Current | -- | -- | 320 | A | |
| VSD | Tegangan Maju Dioda | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Reverse Recovery wektu | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Reverse Recovery daya | -- | 250 | -- | nC |
