WSD80100DN56 N-saluran 80V 100A DFN5X6-8 WINSOK MOSFET

produk

WSD80100DN56 N-saluran 80V 100A DFN5X6-8 WINSOK MOSFET

katrangan singkat:

Nomer Bagian:WSD80100DN56

BVDSS:80V

ID:100A

RDSON:6,1mΩ

Saluran:N-saluran

Paket:DFN5X6-8


Detail Produk

Aplikasi

Tag produk

Ringkesan produk WINSOK MOSFET

Tegangan WSD80100DN56 MOSFET yaiku 80V, saiki yaiku 100A, resistensi yaiku 6.1mΩ, saluran kasebut saluran N, lan paket kasebut yaiku DFN5X6-8.

Area aplikasi WINSOK MOSFET

MOSFET drone, MOSFET motor, MOSFET elektronik otomotif, MOSFET peralatan utama.

WINSOK MOSFET cocog karo nomer materi merek liyane

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semikonduktor MOSFET PDC7966X.

paramèter MOSFET

Simbol

Paramèter

Rating

Unit

VDS

Drain-Sumber Tegangan

80

V

VGS

Gate-Source Tegangan

±20

V

TJ

Suhu Junction maksimum

150

°C

ID

Kisaran Suhu Panyimpenan

-55 kanggo 150

°C

ID

Arus Saluran Kontinu, VGS= 10 V, TC=25°C

100

A

Arus Saluran Kontinu, VGS= 10 V, TC=100°C

80

A

IDM

Pulsed Drain Current, TC=25°C

380

A

PD

Disipasi Daya Maksimum, TC=25°C

200

W

RqJC

Thermal Resistance-Junction kanggo Case

0.8

°C

EAS

Energi Longsor, Pulsa Tunggal, L=0.5mH

800

mJ

 

Simbol

Paramèter

kahanan

Min.

Tipe.

Maks.

Unit

BVDSS

Tegangan Pecah Sumber Saluran VGS= 0V, akuD= 250uA

80

---

---

V

BVDSS/△TJ

BVDSSKoefisien Suhu Referensi kanggo 25, akuD= 1 mA

---

0.043

---

V/

RDS (ON)

Statis Saluran-Sumber On-Resistance2 VGS = 10 V, ID=40A

---

6.1

8.5

mΩ

VGS(th)

Tegangan Ambang Gerbang VGS=VDS, akuD= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Koefisien Suhu

---

-6.94

---

mV/

IDSS

Arus Kebocoran Sumber Saluran VDS= 48 V, VGS= 0 V, TJ=25

---

---

2

uA

VDS= 48 V, VGS= 0 V, TJ=55

---

---

10

IGSS

Arus Kebocoran Sumber Gerbang VGS=±20 V, VDS= 0V

---

---

±100

nA

gfs

Transkonduktansi Maju VDS= 5 V, akuD=20A

80

---

---

S

Qg

Total Gate Charge (10V) VDS= 30 V, VGS= 10 V, ingD=30A

---

125

---

nC

Qgs

Gate-Sumber Daya

---

24

---

Qgd

Gate-Drain Charge

---

30

---

Td (ing)

Wektu Tundha Aktifake VDD= 30 V, VGS= 10 V,

RG=2.5Ω, akuD=2A,RL=15Ω.

---

20

---

ns

Tr

Wektu Rise

---

19

---

Td (mati)

Wektu Tundha Pateni

---

70

---

Tf

Tiba Wektu

---

30

---

Ciss

Kapasitansi Input VDS= 25 V, VGS=0V, f=1MHz

---

4900

---

pF

Coss

Kapasitansi Output

---

410

---

Crss

Kapasitansi Transfer Mbalik

---

315

---


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