WSD80120DN56 N-saluran 85V 120A DFN5X6-8 WINSOK MOSFET

produk

WSD80120DN56 N-saluran 85V 120A DFN5X6-8 WINSOK MOSFET

katrangan singkat:

Nomer Bagian:WSD80120DN56

BVDSS:85V

ID:120A

RDSON:3,7mΩ

Saluran:N-saluran

Paket:DFN5X6-8


Detail Produk

Aplikasi

Tag produk

Ringkesan produk WINSOK MOSFET

Tegangan saka WSD80120DN56 MOSFET punika 85V, saiki punika 120A, resistance punika 3.7mΩ, saluran N-saluran, lan paket punika DFN5X6-8.

Area aplikasi WINSOK MOSFET

MOSFET voltase medis, MOSFET peralatan fotografi, MOSFET drone, MOSFET kontrol industri, MOSFET 5G, MOSFET elektronik otomotif.

WINSOK MOSFET cocog karo nomer materi merek liyane

AOS MOSFET AON6276, AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.

paramèter MOSFET

Simbol

Parameter

Rating

Unit

VDS

Drain-Sumber Tegangan

85

V

VGS

Gate-Source Tegangan

±25

V

ID@TC=25

Arus Saluran Kontinu, VGS@10V

120

A

ID@TC=100

Arus Saluran Kontinu, VGS@10V

96

A

IDM

Pulsed Drain Current..TC=25°C

384

A

EAS

Energi Longsor, Pulsa Tunggal, L=0.5mH

320

mJ

IAS

Arus Longsor, Pulsa Tunggal, L=0.5mH

180

A

PD@TC=25

Total Power Dissipation

104

W

PD@TC=100

Total Power Dissipation

53

W

TSTG

Kisaran Suhu Panyimpenan

-55 kanggo 175

TJ

Operating Junction Range Suhu

175

 

Simbol

Parameter

kahanan

Min.

Tipe.

Maks.

Unit

BVDSS

Tegangan Pecah Sumber Saluran VGS= 0V, akuD= 250uA 85

---

---

V

BVDSS/△TJ

BVDSSKoefisien Suhu Referensi kanggo 25, akuD= 1 mA

---

0.096

---

V/

RDS (ON)

Statis Saluran-Sumber On-Resistance VGS= 10 V, ID= 50A

---

3.7

4.8

mΩ

VGS(th)

Tegangan Ambang Gerbang VGS=VDS, akuD= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Koefisien Suhu

---

-5.5

---

mV/

IDSS

Arus Kebocoran Sumber Saluran VDS= 85 V, VGS= 0 V, TJ=25

---

---

1

uA

VDS= 85 V, VGS= 0 V, TJ=55

---

---

10

IGSS

Arus Kebocoran Sumber Gerbang VGS=±25 V, VDS= 0V

---

---

±100

nA

Rg

Resistance Gate VDS= 0 V, VGS=0V, f=1MHz

---

3.2

---

Ω

Qg

Total Gate Charge (10V) VDS= 50 V, VGS= 10 V, ingD= 10A

---

54

---

nC

Qgs

Gate-Sumber Daya

---

17

---

Qgd

Gate-Drain Charge

---

11

---

Td (ing)

Wektu Tundha Aktifake VDD= 50 V, VGS= 10 V,

RG=1Ω,RL=1Ω,IDS=10A.

---

21

---

ns

Tr

Wektu Rise

---

18

---

Td (mati)

Wektu Tundha Pateni

---

36

---

Tf

Tiba Wektu

---

10

---

Ciss

Kapasitansi Input VDS= 40 V, VGS=0V, f=1MHz

---

3750

---

pF

Coss

Kapasitansi Output

---

395

---

Crss

Kapasitansi Transfer Mbalik

---

180

---


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