WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
Katrangan Umum
WSF4022 minangka trench Dual N-Ch MOSFET kanthi kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo sebagian besar aplikasi konverter buck sinkron. linuwih disetujoni.
Fitur
Kanggo Fan Pre-driver H-Bridge, Kontrol Motor, Rectification Sinkron, E-rokok, pangisi daya nirkabel, motor, pasokan listrik darurat, drone, perawatan medis, pangisi daya mobil, pengontrol, produk digital, peralatan rumah tangga cilik, elektronik konsumen.
Aplikasi
Kanggo Fan Pre-driver H-Bridge, Kontrol Motor, Rectification Sinkron, E-rokok, pangisi daya nirkabel, motor, pasokan listrik darurat, drone, perawatan medis, pangisi daya mobil, pengontrol, produk digital, peralatan rumah tangga cilik, elektronik konsumen.
nomer materi sing cocog
AOS
Paramèter penting
| Simbol | Parameter | Rating | Unit | |
| VDS | Drain-Sumber Tegangan | 40 | V | |
| VGS | Tegangan Gate-Sumber | ±20 | V | |
| ID | Arus Saluran (Terus) *AC | TC=25°C | 20* | A |
| ID | Arus Saluran (Terus) *AC | TC=100°C | 20* | A |
| ID | Arus Saluran (Terus) *AC | TA=25°C | 12.2 | A |
| ID | Arus Saluran (Terus) *AC | TA=70°C | 10.2 | A |
| IDMa | Pulsed Drain Current | TC=25°C | 80* | A |
| EASb | Energi Longsor Pulsa Tunggal | L=0,5mH | 25 | mJ |
| IAS b | Arus longsor | L=0,5mH | 17.8 | A |
| PD | Boros Daya Maksimum | TC=25°C | 39.4 | W |
| PD | Boros Daya Maksimum | TC=100°C | 19.7 | W |
| PD | Dissipasi Daya | TA=25°C | 6.4 | W |
| PD | Dissipasi Daya | TA=70°C | 4.2 | W |
| TJ | Operating Junction Range Suhu | 175 | ℃ | |
| TSTG | Suhu Operasi / Suhu Panyimpenan | -55~175 | ℃ | |
| RθJA b | Thermal Resistance Junction-Ambient | Kahanan ajeg c | 60 | ℃ / W |
| RθJC | Thermal Resistance Junction kanggo Case | 3.8 | ℃ / W |
| Simbol | Parameter | kahanan | Min. | Tipe. | Maks. | Unit |
| Statis | ||||||
| V(BR)DSS | Tegangan Pecah Sumber Saluran | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Arus Kebocoran Gerbang | VGS = ±20V, VDS = 0V | ± 100 | nA | ||
| VGS(th) | Tegangan Ambang Gerbang | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS (ing) d | Drain-Sumber On-Negara Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Gate Chargee | ||||||
| Qg | Total Biaya Gate | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Gate-Sumber Daya | 3.24 | nC | |||
| Qgd | Gate-Drain Charge | 2.75 | nC | |||
| Dinamika | ||||||
| Ciss | Kapasitansi Input | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| Coss | Kapasitansi Output | 95 | pF | |||
| Crss | Kapasitansi Transfer Mbalik | 60 | pF | |||
| td (ing) | Ngaktifake Wektu Tundha | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | Nguripake Wektu Rise | 6.9 | ns | |||
| td (mati) | Pateni Wektu Tundha | 22.4 | ns | |||
| tf | Pateni Wektu Tiba | 4.8 | ns | |||
| Dioda | ||||||
| VSDd | Tegangan Maju Dioda | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Kapasitansi Input | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Kapasitansi Output | 8.7 | nC | |||
