WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

katrangan singkat:

Nomer Model:WSF6012

BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

ID:20A/-15A

Saluran:N&P-Saluran

Paket:TO-252-4L

Produk Summery:MOSFET WSF6012 duwe sawetara voltase 60V lan -60V, bisa nangani arus nganti 20A lan -15A, duwe resistensi 28mΩ lan 75mΩ, nduweni fitur N&P-Channel, lan dikemas ing TO-252-4L.

Aplikasi:Rokok elektronik, pangisi daya nirkabel, motor, serep daya, drone, perawatan kesehatan, pangisi daya mobil, pengontrol, elektronik, peralatan, lan barang konsumen.

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Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSF6012 MOSFET minangka piranti kinerja dhuwur kanthi desain kapadhetan sel sing dhuwur. Nyedhiyakake RDSON lan biaya gerbang sing cocog kanggo aplikasi konverter buck sinkron. Kajaba iku, nyukupi syarat RoHS lan Produk Ijo, lan dilengkapi jaminan 100% EAS kanggo fungsionalitas lan linuwih.

Fitur

Teknologi Trench Lanjut kanthi Kapadhetan Sel Dhuwur, Ngisi Gate Super Low, Efek CdV / dt sing Apik banget, Jaminan EAS 100%, lan Pilihan Piranti sing Ramah Lingkungan.

Aplikasi

Konverter Buck Sinkron Titik Frekuensi Tinggi, Sistem Daya DC-DC Jaringan, Saklar Muatan, Rokok elektronik, pangisi daya nirkabel, motor, pasokan listrik darurat, drone, perawatan kesehatan, pangisi daya mobil, pengontrol, piranti digital, peralatan omah cilik, lan elektronik konsumen.

nomer materi sing cocog

AOS AOD603A,

Paramèter penting

Simbol	Paramèter	Rating		Unit
Simbol	Paramèter	N-Saluran	Saluran P	Unit
VDS	Drain-Sumber Tegangan	60	-60	V
VGS	Tegangan Gate-Sumber	±20	±20	V
ID@TC=25 ℃	Arus Saluran Terus, VGS @ 10V1	20	-15	A
ID@TC=70 ℃	Arus Saluran Terus, VGS @ 10V1	15	-10	A
IDM	Pulsed Drain Current2	46	-36	A
EAS	Energi Longsor Pulsa Tunggal3	200	180	mJ
IAS	Arus longsor	59	-50	A
PD@TC=25 ℃	Total Dissipasi Daya4	34.7	34.7	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 150	-55 kanggo 150	℃
TJ	Kisaran Suhu Operating Junction	-55 kanggo 150	-55 kanggo 150	℃

Simbol	Paramèter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=250uA	60	---	---	V
△BVDSS/△TJ	Koefisien Suhu BVDSS	Referensi kanggo 25 ℃, ID = 1mA	---	0.063	---	V/℃
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=10V, ID=8A	---	28	37	mΩ
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=4.5V, ID=5A	---	37	45	mΩ
VGS(th)	Tegangan Ambang Gerbang	VGS = VDS , ID = 250uA	1	---	2.5	V
△VGS(th)	VGS(th) Koefisien Suhu	VGS = VDS , ID = 250uA	---	-5.24	---	mV/℃
IDSS	Arus Kebocoran Sumber Saluran	VDS=48V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Arus Kebocoran Sumber Saluran	VDS=48V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktansi Maju	VDS=5V, ID=8A	---	21	---	S
Rg	Resistance Gate	VDS=0V, VGS=0V, f=1MHz	---	3.0	4.5	Ω
Qg	Total Gate Charge (4.5V)	VDS=48V, VGS=4.5V, ID=8A	---	12.6	20	nC
Qgs	Gate-Sumber Daya		---	3.5	---
Qgd	Gate-Drain Charge		---	6.3	---
Td (ing)	Wektu Tundha Aktifake	VDD=30V, VGS=4.5V, RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Wektu Rise		---	14.2	---
Td (mati)	Wektu Tundha Pateni		---	24.6	---
Tf	Tiba Wektu		---	4.6	---
Ciss	Kapasitansi Input	VDS=15V, VGS=0V, f=1MHz	---	670	---	pF
Coss	Kapasitansi Output		---	70	---
Crss	Kapasitansi Transfer Mbalik		---	35	---