WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

katrangan singkat:

Nomer Model:WSM340N10G

BVDSS:100V

RDSON:1,6mΩ

ID:340A

Saluran:N-saluran

Paket:TOL-8L

Produk Summery:Tegangan WSM340N10G MOSFET yaiku 100V, saiki yaiku 340A, resistensi yaiku 1.6mΩ, saluran kasebut saluran N, lan paket kasebut yaiku TOLL-8L.

Aplikasi:Peralatan medis, drone, pasokan listrik PD, pasokan listrik LED, peralatan industri, lsp.

Kirim Pitakonan PDF

Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSM340N10G minangka trench N-Ch MOSFET kanthi kinerja paling dhuwur kanthi kapadhetan sel dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo umume aplikasi konverter buck sinkron. WSM340N10G nyukupi syarat RoHS lan Produk Ijo, 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

Fitur

Teknologi trench kapadhetan sel dhuwur sing dhuwur, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.

Aplikasi

Pembetulan sinkron, Konverter DC / DC, Saklar beban, peralatan medis, drone, pasokan listrik PD, pasokan listrik LED, peralatan industri, lsp.

Paramèter penting

Ratings maksimum Absolute

Simbol	Parameter	Rating	Unit
VDS	Drain-Sumber Tegangan	100	V
VGS	Tegangan Gate-Sumber	±20	V
ID@TC=25 ℃	Arus Saluran Terus, VGS @ 10V	340	A
ID@TC=100 ℃	Arus Saluran Terus, VGS @ 10V	230	A
IDM	Pulsed Drain Current..TC=25°C	1150	A
EAS	Energi Longsor, Pulsa Tunggal, L=0.5mH	1800	mJ
IAS	Arus Longsor, Pulsa Tunggal, L=0.5mH	120	A
PD@TC=25 ℃	Total Power Dissipation	375	W
PD@TC=100 ℃	Total Power Dissipation	187	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 175	℃
TJ	Kisaran Suhu Operating Junction	175	℃

Karakteristik Listrik (TJ=25 ℃, kajaba kacathet liyane)

Simbol	Parameter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=250uA	100	---	---	V
△BVDSS/△TJ	Koefisien Suhu BVDSS	Referensi kanggo 25 ℃, ID = 1mA	---	0.096	---	V/℃
RDS (ON)	Statis Saluran-Sumber On-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS(th)	Tegangan Ambang Gerbang	VGS = VDS , ID = 250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Koefisien Suhu	VGS = VDS , ID = 250uA	---	-5.5	---	mV/℃
IDSS	Arus Kebocoran Sumber Saluran	VDS=85V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Arus Kebocoran Sumber Saluran	VDS=85V, VGS=0V, TJ=55℃	---	---	10	uA
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±25V, VDS=0V	---	---	± 100	nA
Rg	Resistance Gate	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Total Gate Charge (10V)	VDS=50V, VGS=10V, ID=50A	---	260	---	nC
Qgs	Gate-Sumber Daya		---	80	---
Qgd	Gate-Drain Charge		---	60	---
Td (ing)	Wektu Tundha Aktifake	VDD=50V, VGS=10V, RG=1Ω,RL=1Ω,ID=1A.	---	88	---	ns
Tr	Wektu Rise		---	50	---
Td (mati)	Wektu Tundha Pateni		---	228	---
Tf	Tiba Wektu		---	322	---
Ciss	Kapasitansi Input	VDS=40V, VGS=0V, f=1MHz	---	13900	---	pF
Coss	Kapasitansi Output		---	6160	---
Crss	Kapasitansi Transfer Mbalik		---	220	---