WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

produk

WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

katrangan singkat:


  • Nomer Model:WSM340N10G
  • BVDSS:100V
  • RDSON:1,6mΩ
  • ID:340A
  • Saluran:N-saluran
  • Paket:TOL-8L
  • Produk Summery:Tegangan WSM340N10G MOSFET yaiku 100V, saiki yaiku 340A, resistensi yaiku 1.6mΩ, saluran kasebut saluran N, lan paket kasebut yaiku TOLL-8L.
  • Aplikasi:Peralatan medis, drone, pasokan listrik PD, pasokan listrik LED, peralatan industri, lsp.
  • Detail Produk

    Aplikasi

    Tag produk

    Katrangan Umum

    WSM340N10G minangka trench N-Ch MOSFET kinerja paling dhuwur kanthi kapadhetan sel dhuwur banget, sing nyedhiyakake RDSON lan pangisian gerbang sing apik kanggo sebagian besar aplikasi konverter buck sinkron.WSM340N10G nyukupi syarat RoHS lan Produk Ijo, 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

    Fitur

    Teknologi trench kapadhetan sel dhuwur sing dhuwur, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.

    Aplikasi

    Pembetulan sinkron, Konverter DC / DC, Saklar beban, peralatan medis, drone, pasokan listrik PD, pasokan listrik LED, peralatan industri, lsp.

    Paramèter penting

    Ratings maksimum Absolute

    Simbol Parameter Rating Unit
    VDS Drain-Sumber Tegangan 100 V
    VGS Tegangan Gate-Sumber ±20 V
    ID@TC=25 ℃ Arus Saluran Terus, VGS @ 10V 340 A
    ID@TC=100 ℃ Arus Saluran Terus, VGS @ 10V 230 A
    IDM Pulsed Drain Current..TC=25°C 1150 A
    EAS Energi Longsor, Pulsa Tunggal, L=0.5mH 1800 mJ
    IAS Arus Longsor, Pulsa Tunggal, L=0.5mH 120 A
    PD@TC=25 ℃ Total Power Dissipation 375 W
    PD@TC=100 ℃ Total Power Dissipation 187 W
    TSTG Kisaran Suhu Panyimpenan -55 kanggo 175
    TJ Operating Junction Range Suhu 175

    Karakteristik Listrik (TJ=25 ℃, kajaba kacathet liyane)

    Simbol Parameter kahanan Min. Tipe. Maks. Unit
    BVDSS Tegangan Pecah Sumber Saluran VGS=0V, ID=250uA 100 --- --- V
    △BVDSS/△TJ Koefisien Suhu BVDSS Referensi kanggo 25 ℃, ID = 1mA --- 0.096 --- V/℃
    RDS (ON) Statis Saluran-Sumber On-Resistance VGS=10V,ID=50A --- 1.6 2.3
    VGS(th) Tegangan Ambang Gerbang VGS = VDS , ID = 250uA 2.0 3.0 4.0 V
    △VGS(th) VGS(th) Koefisien Suhu --- -5.5 --- mV/℃
    IDSS Arus Kebocoran Sumber Saluran VDS=85V, VGS=0V, TJ=25℃ --- --- 1 uA
    VDS=85V, VGS=0V, TJ=55℃ --- --- 10
    IGSS Arus Kebocoran Sumber Gerbang VGS=±25V, VDS=0V --- --- ± 100 nA
    Rg Resistance Gate VDS=0V, VGS=0V, f=1MHz --- 1.0 --- Ω
    Qg Total Gate Charge (10V) VDS=50V, VGS=10V, ID=50A --- 260 --- nC
    Qgs Gate-Sumber Daya --- 80 ---
    Qgd Gate-Drain Charge --- 60 ---
    Td (ing) Wektu Tundha Aktifake VDD=50V, VGS=10V, RG=1Ω,RL=1Ω,ID=1A. --- 88 --- ns
    Tr Wektu Rise --- 50 ---
    Td (mati) Wektu Tundha Pateni --- 228 ---
    Tf Tiba Wektu --- 322 ---
    Ciss Kapasitansi Input VDS=40V, VGS=0V, f=1MHz --- 13900 --- pF
    Coss Kapasitansi Output --- 6160 ---
    Crss Kapasitansi Transfer Mbalik --- 220 ---

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