WSP4016 N-saluran 40V 15.5A SOP-8 WINSOK MOSFET

WSP4016 N-channel 40V 15.5A SOP-8 WINSOK MOSFET Gambar Unggulan

katrangan singkat:

Nomer Model:WSP4016

BVDSS:40V

RDSON:11,5mΩ

ID:15.5A

Saluran:N-saluran

Paket:SOP-8

Produk Summery:Tegangan WSP4016 MOSFET yaiku 40V, saiki yaiku 15.5A, resistensi yaiku 11.5mΩ, saluran kasebut saluran N, lan paket kasebut SOP-8.

Aplikasi:Elektronik otomotif, lampu LED, audio, produk digital, peralatan rumah tangga cilik, elektronik konsumen, papan perlindungan, lsp

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Detail Produk

Aplikasi

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Katrangan Umum

WSP4016 minangka trench N-ch MOSFET kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo umume aplikasi konverter buck sinkron. WSP4016 nyukupi syarat RoHS lan Produk Ijo, 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

Fitur

Teknologi Trench kapadhetan sel dhuwur sing dhuwur, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.

Aplikasi

Konverter dorongan LED putih, Sistem Otomotif, Sirkuit Konversi DC / DC Industri, Elektronik Otomotif, lampu LED, audio, produk digital, peralatan rumah tangga cilik, elektronik konsumen, papan perlindungan, lsp.

nomer materi sing cocog

AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.

Paramèter penting

Simbol	Paramèter	Rating	Unit
VDS	Drain-Sumber Tegangan	40	V
VGS	Tegangan Gate-Sumber	±20	V
ID@TC=25 ℃	Arus Saluran Terus, VGS @ 10V1	15.5	A
ID@TC=70 ℃	Arus Saluran Terus, VGS @ 10V1	8.4	A
IDM	Pulsed Drain Current2	30	A
PD@TA=25 ℃	Total Daya Bocor TA=25°C	2.08	W
PD@TA=70 ℃	Total Daya Bocor TA=70°C	1.3	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 150	℃
TJ	Kisaran Suhu Operating Junction	-55 kanggo 150	℃

Karakteristik Listrik (TJ=25 ℃, kajaba kacathet)

Simbol	Paramèter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=250uA	40	---	---	V
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=10V, ID=7A	---	8.5	11.5	mΩ
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=4.5V, ID=5A	---	11	14.5	mΩ
VGS(th)	Tegangan Ambang Gerbang	VGS = VDS , ID = 250uA	1.0	1.8	2.5	V
IDSS	Arus Kebocoran Sumber Saluran	VDS=32V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Arus Kebocoran Sumber Saluran	VDS=32V, VGS=0V, TJ=55℃	---	---	25	uA
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktansi Maju	VDS=5V, ID=15A	---	31	---	S
Qg	Total Gate Charge (4.5V)	VDS=20V,VGS=10V,ID=7A	---	20	30	nC
Qgs	Gate-Sumber Daya		---	3.9	---
Qgd	Gate-Drain Charge		---	3	---
Td (ing)	Wektu Tundha Aktifake	VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω.	---	12.6	---	ns
Tr	Wektu Rise		---	10	---
Td (mati)	Wektu Tundha Pateni		---	23.6	---
Tf	Tiba Wektu		---	6	---
Ciss	Kapasitansi Input	VDS=20V, VGS=0V, f=1MHz	---	1125	---	pF
Coss	Kapasitansi Output		---	132	---
Crss	Kapasitansi Transfer Mbalik		---	70	---