WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET

katrangan singkat:

Nomer Model:WSP4099

BVDSS:-40 V

RDSON:30mΩ

ID:-6.5A

Saluran:Dual P-Channel

Paket:SOP-8

Produk Summery:MOSFET WSP4099 nduweni tegangan -40V, arus -6.5A, resistensi 30mΩ, Dual P-Channel, lan kasedhiya ing paket SOP-8.

Aplikasi:Rokok elektronik, pangisi daya nirkabel, motor, drone, medis, pangisi daya otomatis, pengontrol, produk digital, piranti cilik, elektronik konsumen.

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Detail Produk

Aplikasi

Tag produk

Katrangan Umum

WSP4099 minangka MOSFET P-ch trench sing kuat kanthi kapadhetan sel sing dhuwur. Iki ngirimake RDSON lan gapura sing apik banget, saengga cocog kanggo aplikasi konverter buck sinkron. Iki cocog karo standar RoHS lan GreenProduct lan nduweni jaminan 100% EAS kanthi persetujuan linuwih fungsi lengkap.

Fitur

Teknologi Trench Lanjut kanthi kapadhetan sel sing dhuwur, pangisian gerbang ultra-rendah, pembusukan efek CdV/dt sing apik lan jaminan 100% EAS kabeh fitur piranti ijo sing kasedhiya.

Aplikasi

Konverter Buck Sinkron Titik Beban Frekuensi Tinggi kanggo MB/NB/UMPC/VGA, Sistem Daya DC-DC Jaringan, Saklar Beban, Rokok elektronik, pangisi daya nirkabel, motor, drone, perawatan medis, pangisi daya mobil, pengontrol, produk digital , piranti omah cilik, lan elektronik konsumen.

nomer materi sing cocog

ON FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A,Sinopower SM4405BSK,dintek DTM4807,ruichips RU40S4H.

Paramèter penting

Simbol	Paramèter	Rating	Unit
VDS	Drain-Sumber Tegangan	-40	V
VGS	Tegangan Gate-Sumber	±20	V
ID@TC=25 ℃	Arus Saluran Terus, -VGS @ -10V1	-6.5	A
ID@TC=100 ℃	Arus Saluran Terus, -VGS @ -10V1	-4.5	A
IDM	Pulsed Drain Current2	-22	A
EAS	Energi Longsor Pulsa Tunggal3	25	mJ
IAS	Arus longsor	-10	A
PD@TC=25 ℃	Total Dissipasi Daya4	2.0	W
TSTG	Kisaran Suhu Panyimpenan	-55 kanggo 150	℃
TJ	Kisaran Suhu Operating Junction	-55 kanggo 150	℃

Simbol	Paramèter	kahanan	Min.	Tipe.	Maks.	Unit
BVDSS	Tegangan Pecah Sumber Saluran	VGS=0V, ID=-250uA	-40	---	---	V
△BVDSS/△TJ	Koefisien Suhu BVDSS	Referensi kanggo 25 ℃, ID=-1mA	---	-0.02	---	V/℃
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=-10V, ID=-6.5A	---	30	38	mΩ
RDS (ON)	Statis Drain-Sumber On-Resistance2	VGS=-4.5V, ID=-4.5A	---	46	62	mΩ
VGS(th)	Tegangan Ambang Gerbang	VGS=VDS , ID =-250uA	-1.5	-2.0	-2.5	V
△VGS(th)	VGS(th) Koefisien Suhu	VGS=VDS , ID =-250uA	---	3.72	---	V/℃
IDSS	Arus Kebocoran Sumber Saluran	VDS=-32V, VGS=0V, TJ=25 ℃	---	---	1	uA
IDSS	Arus Kebocoran Sumber Saluran	VDS=-32V, VGS=0V, TJ=55 ℃	---	---	5	uA
IGSS	Arus Kebocoran Sumber Gerbang	VGS=±20V, VDS=0V	---	---	± 100	nA
gfs	Transkonduktansi Maju	VDS=-5V, ID=-4A	---	8	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-20V, VGS=-4.5V, ID=-6.5A	---	7.5	---	nC
Qgs	Gate-Sumber Daya		---	2.4	---
Qgd	Gate-Drain Charge		---	3.5	---
Td (ing)	Wektu Tundha Aktifake	VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=20Ω	---	8.7	---	ns
Tr	Wektu Rise		---	7	---
Td (mati)	Wektu Tundha Pateni		---	31	---
Tf	Tiba Wektu		---	17	---
Ciss	Kapasitansi Input	VDS=-15V, VGS=0V, f=1MHz	---	668	---	pF
Coss	Kapasitansi Output		---	98	---
Crss	Kapasitansi Transfer Mbalik		---	72	---