WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET
Katrangan Umum
WSP4447 minangka MOSFET kanthi kinerja paling dhuwur sing nggunakake teknologi trench lan nduweni kapadhetan sel sing dhuwur. Nawakake RDSON lan pangisian daya gerbang sing apik banget, saengga bisa digunakake ing aplikasi konverter buck sinkron. WSP4447 nyukupi standar RoHS lan Produk Ijo, lan dilengkapi jaminan 100% EAS kanggo linuwih.
Fitur
Teknologi Trench Lanjut ngidini kapadhetan sel sing luwih dhuwur, sing nyebabake Piranti Ijo kanthi Ngisi Gate Super Low lan efek CdV / dt sing apik banget.
Aplikasi
Konverter Frekuensi Dhuwur kanggo Macem-macem Elektronik
Konverter iki dirancang kanggo nguwasani macem-macem piranti kanthi efisien, kalebu laptop, konsol game, peralatan jaringan, e-rokok, pangisi daya nirkabel, motor, drone, piranti medis, pangisi daya mobil, pengontrol, produk digital, piranti omah cilik, lan konsumen. elektronik.
nomer materi sing cocog
AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421,Sinopower SM4403PSK,RUICIPS RU40L10H.
Paramèter penting
Simbol | Paramèter | Rating | Unit |
VDS | Drain-Sumber Tegangan | -40 | V |
VGS | Tegangan Gate-Sumber | ±20 | V |
ID@TA=25 ℃ | Arus Saluran Terus, VGS @ -10V1 | -11 | A |
ID@TA=70 ℃ | Arus Saluran Terus, VGS @ -10V1 | -9.0 | A |
IDM a | 300µs Pulsed Drain Current (VGS=-10V) | -44 | A |
EAS b | Energi Longsor, Pulsa Tunggal (L=0.1mH) | 54 | mJ |
IAS b | Arus Longsor, Pulsa Tunggal (L=0.1mH) | -33 | A |
PD@TA=25 ℃ | Total Dissipasi Daya4 | 2.0 | W |
TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ |
TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ |
Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
BVDSS | Tegangan Pecah Sumber Saluran | VGS=0V, ID=-250uA | -40 | --- | --- | V |
△BVDSS/△TJ | Koefisien Suhu BVDSS | Referensi kanggo 25 ℃, ID=-1mA | --- | -0,018 | --- | V/℃ |
RDS (ON) | Statis Drain-Sumber On-Resistance2 | VGS=-10V, ID=-13A | --- | 13 | 16 | mΩ |
VGS=-4.5V, ID=-5A | --- | 18 | 26 | |||
VGS(th) | Tegangan Ambang Gerbang | VGS=VDS , ID =-250uA | -1.4 | -1.9 | -2.4 | V |
△VGS(th) | VGS(th) Koefisien Suhu | --- | 5.04 | --- | mV/℃ | |
IDSS | Arus Kebocoran Sumber Saluran | VDS=-32V, VGS=0V, TJ=25 ℃ | --- | --- | -1 | uA |
VDS=-32V, VGS=0V, TJ=55 ℃ | --- | --- | -5 | |||
IGSS | Arus Kebocoran Sumber Gerbang | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Transkonduktansi Maju | VDS=-5V, ID=-10A | --- | 18 | --- | S |
Qg | Total Gate Charge (-4.5V) | VDS=-20V, VGS=-10V, ID=-11A | --- | 32 | --- | nC |
Qgs | Gate-Sumber Daya | --- | 5.2 | --- | ||
Qgd | Gate-Drain Charge | --- | 8 | --- | ||
Td (ing) | Wektu Tundha Aktifake | VDD=-20V, VGS=-10V, RG=6Ω, ID=-1A, RL=20Ω | --- | 14 | --- | ns |
Tr | Wektu Rise | --- | 12 | --- | ||
Td (mati) | Wektu Tundha Pateni | --- | 41 | --- | ||
Tf | Tiba Wektu | --- | 22 | --- | ||
Ciss | Kapasitansi Input | VDS=-15V, VGS=0V, f=1MHz | --- | 1500 | --- | pF |
Coss | Kapasitansi Output | --- | 235 | --- | ||
Crss | Kapasitansi Transfer Mbalik | --- | 180 | --- |