WSP6067A N&P-Channel 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Katrangan Umum
MOSFET WSP6067A minangka teknologi paling canggih kanggo trench P-ch, kanthi kapadhetan sel sing dhuwur banget. Dheweke menehi kinerja sing apik banget babagan biaya RDSON lan gapura, sing cocog kanggo konverter sing paling sinkron. MOSFET iki cocog karo kritéria RoHS lan Produk Ijo, kanthi 100% EAS njamin linuwih fungsional.
Fitur
Teknologi canggih mbisakake pembentukan trench sel kanthi kapadhetan dhuwur, nyebabake pangisi daya gerbang super rendah lan pembusukan efek CdV / dt sing unggul. Piranti kita dilengkapi garansi 100% EAS lan ramah lingkungan.
Aplikasi
Konverter Buck Synchronous Point-of-Load Frekuensi Dhuwur, Sistem Daya DC-DC Jaringan, Saklar Muatan, Rokok elektronik, pangisi daya nirkabel, motor, drone, peralatan medis, pangisi daya mobil, pengontrol, piranti elektronik, piranti omah cilik, lan elektronik konsumen .
nomer materi sing cocog
AOS
Paramèter penting
Simbol | Paramèter | Rating | Unit | |
N-Saluran | Saluran P | |||
VDS | Drain-Sumber Tegangan | 60 | -60 | V |
VGS | Tegangan Gate-Sumber | ±20 | ±20 | V |
ID@TC=25 ℃ | Arus Saluran Terus, VGS @ 10V1 | 7.0 | -5.0 | A |
ID@TC=100 ℃ | Arus Saluran Terus, VGS @ 10V1 | 4.0 | -2.5 | A |
IDM | Pulsed Drain Current2 | 28 | -20 | A |
EAS | Energi Longsor Pulsa Tunggal3 | 22 | 28 | mJ |
IAS | Arus longsor | 21 | -24 | A |
PD@TC=25 ℃ | Total Dissipasi Daya4 | 2.0 | 2.0 | W |
TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | -55 kanggo 150 | ℃ |
TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | -55 kanggo 150 | ℃ |
Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
BVDSS | Tegangan Pecah Sumber Saluran | VGS=0V, ID=250uA | 60 | --- | --- | V |
△BVDSS/△TJ | Koefisien Suhu BVDSS | Referensi kanggo 25 ℃, ID = 1mA | --- | 0.063 | --- | V/℃ |
RDS (ON) | Statis Drain-Sumber On-Resistance2 | VGS=10V, ID=5A | --- | 38 | 52 | mΩ |
VGS=4.5V, ID=4A | --- | 55 | 75 | |||
VGS(th) | Tegangan Ambang Gerbang | VGS = VDS , ID = 250uA | 1 | 2 | 3 | V |
△VGS(th) | VGS(th) Koefisien Suhu | --- | -5.24 | --- | mV/℃ | |
IDSS | Arus Kebocoran Sumber Saluran | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Arus Kebocoran Sumber Gerbang | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
gfs | Transkonduktansi Maju | VDS=5V, ID=4A | --- | 28 | --- | S |
Rg | Resistance Gate | VDS=0V, VGS=0V, f=1MHz | --- | 2.8 | 4.3 | Ω |
Qg | Total Gate Charge (4.5V) | VDS=48V, VGS=4.5V, ID=4A | --- | 19 | 25 | nC |
Qgs | Gate-Sumber Daya | --- | 2.6 | --- | ||
Qgd | Gate-Drain Charge | --- | 4.1 | --- | ||
Td (ing) | Wektu Tundha Aktifake | VDD=30V, VGS=10V, RG=3.3Ω, ID=1A | --- | 3 | --- | ns |
Tr | Wektu Rise | --- | 34 | --- | ||
Td (mati) | Wektu Tundha Pateni | --- | 23 | --- | ||
Tf | Tiba Wektu | --- | 6 | --- | ||
Ciss | Kapasitansi Input | VDS=15V, VGS=0V, f=1MHz | --- | 1027 | --- | pF |
Coss | Kapasitansi Output | --- | 65 | --- | ||
Crss | Kapasitansi Transfer Mbalik | --- | 45 | --- |