WSR140N12 N-saluran 120V 140A TO-220-3L WINSOK MOSFET

produk

WSR140N12 N-saluran 120V 140A TO-220-3L WINSOK MOSFET

katrangan singkat:


  • Nomer Model:WSR140N12
  • BVDSS:120V
  • RDSON:5mΩ
  • ID:140A
  • Saluran:N-saluran
  • Paket:TO-220-3L
  • Produk Summery:Tegangan WSR140N12 MOSFET yaiku 120V, saiki yaiku 140A, resistensi yaiku 5mΩ, saluran kasebut saluran N, lan paket kasebut yaiku TO-220-3L.
  • Aplikasi:Pasokan listrik, medis, peralatan utama, BMS, lsp.
  • Detail Produk

    Aplikasi

    Tag produk

    Katrangan Umum

    WSR140N12 minangka trench N-ch MOSFET kanthi kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo umume aplikasi konverter buck sinkron.WSR140N12 nyukupi syarat RoHS lan Produk Ijo, 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.

    Fitur

    Teknologi Trench kapadhetan sel dhuwur sing dhuwur, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.

    Aplikasi

    Konverter Buck Sinkron Titik Frekuensi Tinggi, Sistem Daya DC-DC Jaringan, Sumber Daya, medis, peralatan utama, BMS dll.

    nomer materi sing cocog

    ST STP40NF12 etc.

    Paramèter penting

    Simbol Parameter Rating Unit
    VDS Drain-Sumber Tegangan 120 V
    VGS Tegangan Gate-Sumber ±20 V
    ID Arus Saluran Terus, VGS @ 10V(TC=25℃) 140 A
    IDM Pulsed Drain Current 330 A
    EAS Energi Longsor Pulsa Tunggal 400 mJ
    PD Total Dissipasi Daya... C=25 ℃) 192 W
    RθJA Resistance termal, persimpangan-ambient 62 ℃ / W
    RθJC Resistance termal, junction-case 0.65 ℃ / W
    TSTG Kisaran Suhu Panyimpenan -55 kanggo 150
    TJ Operating Junction Range Suhu -55 kanggo 150
    Simbol Parameter kahanan Min. Tipe. Maks. Unit
    BVDSS Tegangan Pecah Sumber Saluran VGS=0V, ID=250uA 120 --- --- V
    RDS (ON) Statis Drain-Sumber On-Resistance2 VGS=10V, ID=30A --- 5.0 6.5
    VGS(th) Tegangan Ambang Gerbang VGS = VDS , ID = 250uA 2.0 --- 4.0 V
    IDSS Arus Kebocoran Sumber Saluran VDS=120V, VGS=0V, TJ=25 ℃ --- --- 1 uA
    IGSS Arus Kebocoran Sumber Gerbang VGS=±20V, VDS=0V --- --- ± 100 nA
    Qg Total Biaya Gate VDS=50V, VGS=10V, ID=15A --- 68.9 --- nC
    Qgs Gate-Sumber Daya --- 18.1 ---
    Qgd Gate-Drain Charge --- 15.9 ---
    Td (ing) Wektu Tundha Aktifake VDD=50V, VGS=10VRG=2Ω,ID=25A --- 30.3 --- ns
    Tr Wektu Rise --- 33.0 ---
    Td (mati) Wektu Tundha Pateni --- 59.5 ---
    Tf Tiba Wektu --- 11.7 ---
    Ciss Kapasitansi Input VDS=50V, VGS=0V, f=1MHz --- 5823 --- pF
    Coss Kapasitansi Output --- 778.3 ---
    Crss Kapasitansi Transfer Mbalik --- 17.5 ---

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