WSR200N08 N-saluran 80V 200A TO-220-3L WINSOK MOSFET
Katrangan Umum
WSR200N08 minangka trench N-Ch MOSFET kinerja paling dhuwur kanthi kapadhetan sel sing dhuwur banget, sing nyedhiyakake RDSON lan biaya gerbang sing apik kanggo umume aplikasi konverter buck sinkron. WSR200N08 nyukupi syarat RoHS lan Produk Ijo, 100% EAS dijamin kanthi linuwih fungsi sing disetujoni.
Fitur
Teknologi Trench kapadhetan sel dhuwur sing dhuwur, Ngisi Gate Super Low, Efek CdV / dt sing apik banget, Dijamin EAS 100%, Piranti Ijo kasedhiya.
Aplikasi
Aplikasi switching, Manajemen Daya kanggo Sistem Inverter, Rokok elektronik, pangisi daya nirkabel, motor, BMS, pasokan listrik darurat, drone, medis, pangisi daya mobil, pengontrol, printer 3D, produk digital, peralatan rumah tangga cilik, elektronik konsumen, lsp.
nomer materi sing cocog
AO AOT480L, ON FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, lsp.
Paramèter penting
Karakteristik Listrik (TJ=25 ℃, kajaba kacathet liyane)
Simbol | Paramèter | Rating | Unit |
VDS | Drain-Sumber Tegangan | 80 | V |
VGS | Tegangan Gate-Sumber | ±25 | V |
ID@TC=25 ℃ | Arus Saluran Terus, VGS @ 10V1 | 200 | A |
ID@TC=100 ℃ | Arus Saluran Terus, VGS @ 10V1 | 144 | A |
IDM | Pulsed Drain Current2,TC=25°C | 790 | A |
EAS | Energi Longsor, Pulsa Tunggal, L=0.5mH | 1496 | mJ |
IAS | Arus Longsor, Pulsa Tunggal, L=0.5mH | 200 | A |
PD@TC=25 ℃ | Total Dissipasi Daya4 | 345 | W |
PD@TC=100 ℃ | Total Dissipasi Daya4 | 173 | W |
TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 175 | ℃ |
TJ | Kisaran Suhu Operating Junction | 175 | ℃ |
Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
BVDSS | Tegangan Pecah Sumber Saluran | VGS=0V, ID=250uA | 80 | --- | --- | V |
△BVDSS/△TJ | Koefisien Suhu BVDSS | Referensi kanggo 25 ℃, ID = 1mA | --- | 0.096 | --- | V/℃ |
RDS (ON) | Statis Drain-Sumber On-Resistance2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
VGS(th) | Tegangan Ambang Gerbang | VGS = VDS , ID = 250uA | 2.0 | 3.0 | 4.0 | V |
△VGS(th) | VGS(th) Koefisien Suhu | --- | -5.5 | --- | mV/℃ | |
IDSS | Arus Kebocoran Sumber Saluran | VDS=80V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=80V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
IGSS | Arus Kebocoran Sumber Gerbang | VGS=±25V, VDS=0V | --- | --- | ± 100 | nA |
Rg | Resistance Gate | VDS=0V, VGS=0V, f=1MHz | --- | 3.2 | --- | Ω |
Qg | Total Gate Charge (10V) | VDS=80V, VGS=10V, ID=30A | --- | 197 | --- | nC |
Qgs | Gate-Sumber Daya | --- | 31 | --- | ||
Qgd | Gate-Drain Charge | --- | 75 | --- | ||
Td (ing) | Wektu Tundha Aktifake | VDD=50V, VGS=10V, RG=3Ω, ID=30A | --- | 28 | --- | ns |
Tr | Wektu Rise | --- | 18 | --- | ||
Td (mati) | Wektu Tundha Pateni | --- | 42 | --- | ||
Tf | Tiba Wektu | --- | 54 | --- | ||
Ciss | Kapasitansi Input | VDS=15V, VGS=0V, f=1MHz | --- | 8154 | --- | pF |
Coss | Kapasitansi Output | --- | 1029 | --- | ||
Crss | Kapasitansi Transfer Mbalik | --- | 650 | --- |