WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Katrangan Umum
MOSFET WST2011 minangka transistor P-ch paling canggih sing kasedhiya, kanthi kapadhetan sel sing ora ana tandhingane. Dheweke nawakake kinerja sing luar biasa, kanthi RDSON lan gapura sing murah, saengga cocog kanggo aplikasi ngalih daya lan ngalih beban cilik. Salajengipun, WST2011 nyukupi standar RoHS lan Produk Ijo lan menehi persetujuan linuwih kanthi fungsi lengkap.
Fitur
Teknologi Trench Lanjut ngidini kapadhetan sel sing luwih dhuwur, sing nyebabake Piranti Ijo kanthi Ngisi Gate Super Low lan efek CdV / dt sing apik banget.
Aplikasi
Ngalih daya cilik sinkron titik frekuensi dhuwur cocog kanggo digunakake ing MB / NB / UMPC / VGA, jaringan sistem daya DC-DC, switch beban, e-rokok, pengontrol, produk digital, peralatan rumah tangga cilik, lan elektronik konsumen. .
nomer materi sing cocog
ING FDC634P, VISHAY Si3443DDV, NXP PMDT670UPE,
Paramèter penting
| Simbol | Paramèter | Rating | Unit | |
| 10s | Steady State | |||
| VDS | Drain-Sumber Tegangan | -20 | V | |
| VGS | Tegangan Gate-Sumber | ± 12 | V | |
| ID@TA=25 ℃ | Arus Saluran Terus, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70 ℃ | Arus Saluran Terus, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Pulsed Drain Current2 | -12 | A | |
| PD@TA=25 ℃ | Total Daya Dissipasi3 | 1.7 | 1.4 | W |
| PD@TA=70 ℃ | Total Daya Dissipasi3 | 1.2 | 0.9 | W |
| TSTG | Kisaran Suhu Panyimpenan | -55 kanggo 150 | ℃ | |
| TJ | Kisaran Suhu Operating Junction | -55 kanggo 150 | ℃ | |
| Simbol | Paramèter | kahanan | Min. | Tipe. | Maks. | Unit |
| BVDSS | Tegangan Pecah Sumber Saluran | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | Koefisien Suhu BVDSS | Referensi kanggo 25 ℃, ID=-1mA | --- | -0,011 | --- | V/℃ |
| RDS (ON) | Statis Drain-Sumber On-Resistance2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V, ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Tegangan Ambang Gerbang | VGS=VDS , ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS(th) Koefisien Suhu | --- | 3.95 | --- | mV/℃ | |
| IDSS | Arus Kebocoran Sumber Saluran | VDS=-16V, VGS=0V, TJ=25 ℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55 ℃ | --- | --- | -5 | |||
| IGSS | Arus Kebocoran Sumber Gerbang | VGS=±12V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Transkonduktansi Maju | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Sumber Daya | --- | 1.1 | 1.7 | ||
| Qgd | Gate-Drain Charge | --- | 1.1 | 2.9 | ||
| Td (ing) | Wektu Tundha Aktifake | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Wektu Rise | --- | 9.3 | --- | ||
| Td (mati) | Wektu Tundha Pateni | --- | 15.4 | --- | ||
| Tf | Tiba Wektu | --- | 3.6 | --- | ||
| Ciss | Kapasitansi Input | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Kapasitansi Output | --- | 95 | --- | ||
| Crss | Kapasitansi Transfer Mbalik | --- | 68 | --- |
